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參數(shù)資料
| 型號： | L6928TQ1TR |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | High efficiency monolithic synchronous step down regulator |
| 中文描述： | 高效率單片同步降壓穩(wěn)壓器 |
| 文件頁數(shù)： | 9/16頁 |
| 文件大小： | 167K |
| 代理商： | L6928TQ1TR |
L6928
Operation description
9/16
4.2
Short circuit protection
During the device operation, the inductor current increases during the high side turn ON
phase and decrease during the high side turn off phase based on the following equations:
Equation 1
Equation 2
In strong overcurrent or shortcircuit conditions the V
OUT
can be very close to zero. In this
case
I
ON
increases and
I
OFF
decreases. When the inductor peak current reaches the
current limit, the high side mosfet turns off and so the T
ON
is reduced down to the minimum
value (250ns typ.) in order to reduce as much as possible
I
ON
.
Anyway, if V
OUT
is low enough it can be that the inductor peak current further increases
because during the T
OFF
the current decays very slowly.
Due to this reason a second protection that fixes the maximum inductor valley current has
been introduced. This protection doesn't allow the high side MOSFET to turn on if the
current flowing through the inductor is higher that a specified threshold (valley current limit).
Basically the T
OFF
is increased as much as required to bring the inductor current down to
this threshold.
So, the maximum peak current in worst case conditions will be:
Equation 3
Where IPEAK is the valley current limit (1.4A typ.) and T
ON_MIN
is the minimum T
ON
of the
high side MOSFET.
I
ON
V
------------–
V
L
(
)
T
ON
=
I
OFF
V
L
-------------------
)
T
OFF
=
I
PEAK
I
VALLEY
V
L
--------
T
ON_MIN
+
=
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| L6928TR | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:High efficiency monolithic synchronous step down regulator |
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