參數(shù)資料
型號: M1MA151WAT3
廠商: ON SEMICONDUCTOR
元件分類: 二極管(射頻、小信號、開關、功率)
英文描述: 0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE
封裝: CASE 318D-04, SC-59, 3 PIN
文件頁數(shù): 2/3頁
文件大小: 133K
代理商: M1MA151WAT3
M1MA151WAT1, M1MA152WAT1
http://onsemi.com
691
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Symbol
Condition
Min
Max
Unit
Reverse Voltage Leakage Current
M1MA151WAT1
IR
VR = 35 V
0.1
mAdc
M1MA152WAT1
R
VR = 75 V
0.1
m
Forward Voltage
VF
IF = 100 mA
1.2
Vdc
Reverse Breakdown Voltage
M1MA151WAT1
VR
IR = 100 mA
40
Vdc
M1MA152WAT1
R
m
80
Diode Capacitance
CD
VR = 0, f = 1.0 MHz
15
pF
Reverse Recovery Time (Figure 1)
trr
(Note 2)
IF = 10 mA, VR = 6.0 V,
RL = 100 W, Irr = 0.1 IR
10
ns
2. trr Test Circuit
A
RL
tr
tp
t
10%
90%
VR
tp = 2 ms
tr = 0.35 ns
IF
trr
t
Irr = 0.1 IR
IF = 10 mA
VR = 6 V
RL = 100 W
RECOVERY TIME EQUIVALENT TEST CIRCUIT
INPUT PULSE
OUTPUT PULSE
Figure 1. Reverse Recovery Time Equivalent Test Circuit
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