參數(shù)資料
型號: M54585
廠商: Mitsubishi Electric Corporation
英文描述: 8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
中文描述: 8個單位500mA的達(dá)林頓晶體管陣列鉗位二極管
文件頁數(shù): 2/4頁
文件大?。?/td> 82K
代理商: M54585
Jan. 2000
ton
toff
50%
50%
50%
50%
INPUT
OUTPUT
(1)Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10
μ
s, tr = 6ns, tf = 6ns, Zo = 50
,
V
I
= 3.85V
(2)Input-output conditions : R
L
= 25
, Vo = 10V
(3)Electrostatic capacity C
L
includes floating capacitance at
connections and input capacitance at probes
PG
50
R
L
OUTPUT
INPUT
Vo
C
L
OPEN
Measured device
“H” input voltage
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M54585KP
8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
RECOMMENDED OPERATING CONDITIONS
(Unless otherwise noted, Ta = –20 ~ +75
°
C)
TIMING DIAGRAM
NOTE 1 TEST CIRCUIT
ns
ns
12
240
Symbol
Unit
Parameter
Test conditions
Limits
typ
min
max
Turn-on time
Turn-off time
t
on
t
off
C
L
= 15pF (note 1)
SWITCHING CHARACTERISTICS
(Unless otherwise noted, Ta = 25
°
C)
Parameter
0
Limits
typ
min
max
50
Symbol
Unit
V
O
Output voltage
Collector current
(Current per 1 cir-
cuit when 8 circuits
are coming on si-
multaneously)
“L” input voltage
Duty Cycle
10%
Duty Cycle
50%
I
C
V
IH
200
70
30
30
0.6
V
mA
V
V
V
V
IL
Ic
400mA
Ic
200mA
0
0
3.85
3.4
0
2.4
1.6
1.8
18
2.4
100
I
CEO
= 100
μ
A
V
I
= 3.85V, I
C
= 400mA
V
I
= 3.4V, I
C
= 200mA
I
I
= 3.85V
V
I
= 25V
I
F
= 400mA
V
R
= 50V
V
CE
= 4V, I
C
= 350mA, Ta = 25
°
C
1.3
1.0
0.95
8.7
1.5
2500
50
1000
V
(BR) CEO
V
Symbol
Unit
Parameter
Test conditions
Limits
typ
+
min
max
Collector-emitter breakdown voltage
V
CE(sat)
Collector-emitter saturation voltage
ELECTRICAL CHARACTERISTICS
(Unless otherwise noted, Ta = –20 ~ +75
°
C)
I
I
V
F
I
R
h
FE
+
: The typical values are those measured under ambient temperature (Ta) of 25
°
C. There is no guarantee that these values are obtained under any
conditions.
Input current
Clamping diode forward voltage
Clamping diode reverse current
DC amplification factor
V
mA
V
μ
A
POW ER EX
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