參數(shù)資料
型號(hào)： MBR30H100CT/45
廠商： VISHAY SEMICONDUCTORS
元件分類： 整流器
英文描述： 15 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB
封裝： PLASTIC PACKAGE-3
文件頁(yè)數(shù)： 2/4頁(yè)
文件大?。?/td> 108K
代理商： MBR30H100CT/45
MBR30H100CT, MBRF30H100CT & MBRB30H100CT Series
Vishay Semiconductors
formerly General Semiconductor
www.vishay.com
Document Number 88791
2
11-Jul-03
Maximum Ratings (TC = 25°C unless otherwise noted)
Parameter
Symbol
MBR30H90CT
MBR30H100CT
Unit
Maximum repetitive peak reverse voltage
VRRM
90
100
V
Working peak reverse voltage
VRWM
90
100
V
Maximum DC blocking voltage
VDC
90
100
V
Maximum average forward rectified current Total device
30
(see fig. 1)
Per leg
IF(AV)
15
A
Peak forward surge current
8.3ms single half sine-wave superimposed
IFSM
275
A
on rated load (JEDEC Method) per leg
Peak repetitive reverse current per leg at tp = 2
s, 1KHZ
IRRM
1.0
A
Voltage rate of change (rated VR)
dv/dt
10,000
V/
s
Operating junction and storage temperature range
TJ, TSTG
–65 to +175
°C
RMS Isolation voltage (MBRF type only) from terminals
4500 (1)
to heatsink with t = 1 second, RH
≤ 30%
VISOL
3500 (2)
V
1500 (3)
Electrical Characteristics (TC = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
at IF = 15A, TJ = 25°C
0.82
Maximum instantaneous
at IF = 15A, TJ = 125°C
VF
0.67
V
forward voltage per leg(4)
at IF = 30A, TJ = 25°C
0.93
at IF = 30A, TJ = 125°C
0.80
Maximum reverse current per leg
TJ = 25°C
5.0
A
at working peak reverse voltage(4)
TJ = 125°C
IR
6.0
mA
Thermal Characteristics (TC = 25°C unless otherwise noted)
Parameter
Symbol
MBR
MBRF
MBRB
Unit
Typical thermal resistance per leg
R
θJC
1.9
4.6
1.9
O
C/W
Notes:
(1) Clip mounting (on case), where lead does not overlap heatsink with 0.110” offset
(2) Clip mounting (on case), where leads do overlap heatsink
(3) Screw mounting with 4-40 screw, where washer diameter is
≤ 4.9 mm (0.19”)
(4) Pulse test: 300
s pulse width, 1% duty cycle
Ordering Information
Product
Case
Package Code
Package Option
MBR30H90CT - MBR30H100CT
TO-220AB
45
Anti-Static tube, 50/tube, 2K/carton
MBRF30H90CT - MBRF30H100CT
ITO-220AB
45
Anti-Static tube, 50/tube, 2K/carton
31
13” reel, 800/reel, 4.8K/carton
MBRB30H90CT - MBRB30H100CT
TO-263AB
45
Anti-Static tube, 50/tube, 2K/carton
81
Anti-Static 13” reel, 800/reel, 4.8K/carton
相關(guān)PDF資料
PDF描述
MBRB30H90CT/31 15 A, 90 V, SILICON, RECTIFIER DIODE, TO-263AB
MBRF30H100CT/45 15 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB
MBR30H100CT-E3 15 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB
MBRF30H100CT 15 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB
MBR30H100CT 15 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MBR30H100CT-E1 制造商:BCDSEMI 制造商全稱:BCD Semiconductor Manufacturing Limited 功能描述:HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
MBR30H100CT-E3 制造商:Vishay Intertechnologies 功能描述: 制造商:Vishay Intertechnologies 功能描述:15 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB
MBR30H100CT-E3/45 功能描述:肖特基二極管與整流器 100 Volt 30A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
MBR30H100CT-E3/4W 功能描述:肖特基二極管與整流器 100 Volt 30A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel
MBR30H100CTF-E1 制造商:BCDSEMI 制造商全稱:BCD Semiconductor Manufacturing Limited 功能描述:HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*