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參數(shù)資料
| 型號(hào)： | MBRB25H45CT-HE3/81 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 15 A, 45 V, SILICON, RECTIFIER DIODE, TO-263AB |
| 封裝： | ROHS COMPLIANT PACKAGE-3 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大?。?/td> | 133K |
| 代理商： | MBRB25H45CT-HE3/81 |
Document Number: 88789
For technical questions within your region, please contact one of the following:
www.vishay.com
Revision: 18-Mar-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
3
MBR(F,B)25H35CT thru MBR(F,B)25H60CT
Vishay General Semiconductor
New Product
RATINGS AND CHARACTERISTICS CURVES
(TA = 25
°C unless otherwise noted)
Fig. 1 - Forward Derating Curve (Total)
Fig. 2 - Maximum Non-Repetitive Peak Forward
Surge Current Per Diode
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
0
10
20
30
40
25
0
50
75
100
125
150
175
MBRF
MBR, MBRB
A
v
erage
Forwar
d
Curr
ent
(A)
Case Temperature (°C)
1
100
0
25
50
75
100
125
150
10
Number of Cycles at 60 Hz
Peak
Forwar
d
S
ur
ge
Curr
ent
(A)
T
J = TJ Max.
8.3 ms Single Half Sine-Wave
0.01
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0
1
10
100
T
J = 150 °C
T
J = 125 °C
T
J = 25 °C
Instantaneous Forward Voltage (V)
In
s
tantaneou
s
Forwar
d
Curr
ent
(A)
MBR25H35CT, MBR25H45CT
MBR25H50CT, MBR25H60CT
60
040
20
100
80
0.0001
0.001
0.1
0.01
1
10
100
T
J = 150 °C
T
J = 125 °C
T
J = 25 °C
Percent of Rated Peak Reverse Voltage (%)
In
s
tantaneou
s
Rever
s
e
Leakage
Curr
ent
(mA)
MBR25H35CT, MBR25H45CT
MBR25H50CT, MBR25H60CT
0.1
1
100
10
1000
100
10 000
Reverse Voltage (V)
Junction
Cap
acitance
(p
F)
MBR25H35CT, MBR25H45CT
MBR25H50CT, MBR25H60CT
T
J = 25 °C
f = 1.0 MHz
V
sig = 50 mVp-p
0.01
0.1
1
10
t - Pulse Duration (s)
Tr
a
n
s
ient
Thermal
Impedance
(°C/W)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MBRB25H60CT-HE3/81 | 15 A, 60 V, SILICON, RECTIFIER DIODE, TO-263AB |
| MBRF25H45CT-HE3/45 | 15 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBRF25H50CT-E3/45 | 15 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBRF25H60CT-HE3/45 | 15 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB |
| MBR25H45CT-E3/45 | 15 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MBRB25H50CT | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual Common-Cathode Schottky Rectifier |
| MBRB25H60CT | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Dual Common-Cathode Schottky Rectifier |
| MBRB25H60CT/31 | 功能描述:肖特基二極管與整流器 60 Volt 25A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBRB25H60CT/81 | 功能描述:肖特基二極管與整流器 60 Volt 25A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
| MBRB25H60CT-E3/81 | 功能描述:肖特基二極管與整流器 60 Volt 25A Dual Common-Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
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