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參數(shù)資料
| 型號(hào)： | MBRB3035CT-HE3/81 |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 整流器 |
| 英文描述： | 15 A, 35 V, SILICON, RECTIFIER DIODE, TO-263AB |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-3 |
| 文件頁(yè)數(shù)： | 3/5頁(yè) |
| 文件大?。?/td> | 486K |
| 代理商： | MBRB3035CT-HE3/81 |
New Product
MBR(F,B)3035CT & MBR(F,B)3045CT
Vishay General Semiconductor
Document Number: 88677
Revision: 08-Nov-07
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 4. Typical Reverse Characteristics Per Diode
100
10
1.0
0.1
0.01
T
J = 25 °C
T
J = 150 °C
0
0.2
0.1
0.5
1.0
0.4
0.3
0.6
0.7
0.8
0.9
Instantaneous Forward Voltage (V)
Instantaneo
u
s
F
o
rw
ard
C
u
rrent
(A)
1.0
10
100
0.01
0.001
0.1
20
0
100
40
60
80
Percent of Rated Peak Reverse Voltage (%)
Instantaneo
u
s
Re
v
erse
C
u
rrent
(mA)
T
J = 125 °C
T
J = 25 °C
T
J = 75 °C
Figure 5. Typical Transient Thermal Impedance Per Diode
Figure 6. Typical Transient Thermal Impedance Per Diode
10
1
100
1000
10 000
100
0.1
Reverse Voltage (V)
J
u
nction
Capaci
tance
(pF)
T
J = 25 °C
f = 1.0 MHz
V
sig = 50 mVp-p
0.01
10
1
100
10
100
0.1
1
t - Pulse Duration (s)
T
ransient
Ther
mal
Impedance
(°C/
W
)
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| MBRB3045CT-HE3/45 | 15 A, 45 V, SILICON, RECTIFIER DIODE, TO-263AB |
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| MBRB3045CT-HE3/81 | 15 A, 45 V, SILICON, RECTIFIER DIODE, TO-263AB |
| MBRB3035CT-E3/81 | 15 A, 35 V, SILICON, RECTIFIER DIODE, TO-263AB |
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