參數(shù)資料
型號(hào): MBRF1090CT-M3/4W
廠商: VISHAY SEMICONDUCTORS
元件分類: 整流器
英文描述: 5 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AB
封裝: HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, ITO-220AB, 3 PIN
文件頁數(shù): 2/5頁
文件大?。?/td> 76K
代理商: MBRF1090CT-M3/4W
www.vishay.com
For technical questions within your region, please contact one of the following:
Document Number: 89321
2
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 22-Sep-10
MBRF1090CT, MBRF10100CT
Vishay General Semiconductor
New Product
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width
≤ 40 ms
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Maximum Non-Repetititve Peak Forward Surge
Current Per Diode
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
VALUE
UNIT
Maximum instantaneous forward voltage per diode
IF = 5.0 A
TC = 25 °C
VF (1)
0.75
V
TC = 125 °C
0.85
Maximum reverse current per diode
at working peak reverse voltage
TJ = 25 °C
IR (2)
100
μA
TJ = 100 °C
6.0
mA
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBRF1090CT
MBRF10100CT
UNIT
Typical thermal resistance per diode
RθJC
6.8
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
ITO-220AB
MBRF10100CT-M3/4W
1.75
4W
50/tube
Tube
0
2
4
6
12
10
050
75
25
100
125
150
175
8
A
v
er
age
F
o
rw
ard
Re
ctified
Curr
ent
(A
)
Case Temperature (°C)
Resistive or Inductive Load
Mounted on Specific Heatsink
0
20
60
40
100
80
120
1
100
10
T
J = TJ Max.
8.3 ms Single Half Sine-Wave
Number of Cycles at 60 Hz
P
e
ak
F
orw
ard
Surge
Current
(A)
相關(guān)PDF資料
PDF描述
MBRF1090 10 A, 90 V, SILICON, RECTIFIER DIODE
MBRF10H90 10 A, 90 V, SILICON, RECTIFIER DIODE
MBRF15100CT-G 15 A, SILICON, RECTIFIER DIODE, TO-220AB
MBRF1560CT 15 A, 60 V, SILICON, RECTIFIER DIODE
MBRF16100 16 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AC
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