參數(shù)資料
型號(hào)： MF3060C-E3/4W
廠商： VISHAY SEMICONDUCTORS
元件分類： 整流器
英文描述： 15 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB
封裝： ROHS COMPLIANT, PLASTIC, ITO-220AB, 3 PIN
文件頁(yè)數(shù)： 2/5頁(yè)
文件大?。?/td> 143K
代理商： MF3060C-E3/4W
New Product
M3060C, MF3060C & MI3060C
Vishay General Semiconductor
www.vishay.com
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 89009
Revision: 19-May-08
2
Notes:
(1) Pulse test: 300 s pulse width, 1 % duty cycle
(2) Pulse test: Pulse width
≤ 40 ms
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
MAX.
UNIT
Instantaneous forward voltage per diode (1)
IF = 5.0 A
IF = 7.5 A
IF = 15 A
TJ = 25 °C
VF
0.482
0.520
0.614
-
0.72
V
IF = 5.0 A
IF = 7.5 A
IF = 15 A
TJ = 125 °C
0.387
0.443
0.547
-
0.62
Reverse current per diode (2)
rated VR
TJ = 25 °C
TJ = 125 °C
IR
50
23
350
45
A
mA
Typical junction capacitance per diode
4.0 V, 1 MHz
TJ = 25 °C
CJ
540
-
pF
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
M3060C
MF3060C
MI3060C
UNIT
Thermal resistance per diode
RθJC
2.0
5.5
2.0
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-220AB
M3060C-E3/4W
1.85
4W
50/tube
Tube
ITO-220AB
MF3060C-E3/4W
1.75
4W
50/tube
Tube
TO-262AA
MI3060C-E3/4W
1.46
4W
50/tube
Tube
Figure 1. Forward Current Derating Curve
0
6
12
18
24
30
0
50
100
150
A
v
er
age
F
o
rw
ard
C
u
rrent
(A)
Case Temperature (°C)
Resistive or Inductive Load
MF3060C
M(I)3060C
Figure 2. Forward Power Loss Characteristics Per Diode
0
3
2
1
5
4
6
8
9
7
10
11
04
2
8
612
10
14
16
18
Average Forward Current (A)
A
v
erage
Po
w
er
Loss
(
W
)
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.8
D = 1.0
D = t
p/T
t
p
T
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