參數(shù)資料
型號: MG1010-11
廠商: MICROSEMI CORP-LOWELL
元件分類: 二極管(射頻、小信號、開關(guān)、功率)
英文描述: 12.4 GHz - 18 GHz, GALLIUM ARSENIDE, CONTINUOUS WAVE GUNN DIODE
封裝: CERAMIC, ROHS COMPLIANT, M11
文件頁數(shù): 1/4頁
文件大?。?/td> 204K
代理商: MG1010-11
MG1001 – MG1061
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page 1
TM
GUNN Diodes
Cathode Heat Sink
Copyright
2008
Rev: 2009-01-19
Discrete Frequency: Cathode Heatsink
Features
CW Designs to 500 mW
Pulsed Designs to 10 W
Frequency Coverage Specified from 5.9–95 GHz
Low Phase Noise
High Reliability
Applications
Motion Detectors
Transmitters and Receivers
Beacons
Automotive Collision Avoidance Radars
Radars
Radiometers
Instrumentation
Description
Microsemi’s GaAs Gunn diodes, epi-down (cathode
heatsink), are fabricated from epitaxial layers grown at
MSC by the Vapor Phase Epitaxy technique. The layers
are processed using proprietary techniques resulting in
low phase and 1/f noise. MDT Gunn diodes are
available in a variety of microwave ceramic packages
are available for operation from 5–110 GHz.
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