參數(shù)資料
型號(hào)： MG1017-16
廠商： MICROSEMI CORP-LOWELL
元件分類： 二極管(射頻、小信號(hào)、開關(guān)、功率)
英文描述： 26.5 GHz - 40 GHz, GALLIUM ARSENIDE, CONTINUOUS WAVE GUNN DIODE
封裝： CERAMIC, ROHS COMPLIANT, M16
文件頁(yè)數(shù)： 2/4頁(yè)
文件大?。?/td> 204K
代理商： MG1017-16
MG1001 – MG1061
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page 2
TM
GUNN Diodes
Cathode Heat Sink
Copyright
2008
Rev: 2009-01-19
(Discrete Frequency: Cathode Heatsink)
C Band Gunn Diodes (Specifications @ 25°C)
Operating Current
Part
Number
Operating
Frequency1
(GHz)
Min.
Power2
(mW)
Typ.
Operating
Voltage (V)
Min.
(mA)
Max.
(mA)
Package
Outline3
MG1001-11
5.9–8.2
50
12
200
400
M11
MG1002-11
5.9–8.2
100
12
300
600
M11
MG1003-15
5.9–8.2
250
12
600
1100
M15
MG1004-15
5.9–8.2
500
12
900
1300
M15
X Band Gunn Diodes (Specifications @ 25°C)
Operating Current
Part
Number
Operating
Frequen y1
c
(GHz)
Min.
Power2
(mW)
Typ.
Operating
Voltage (V)
Min.
(mA)
Max.
(mA)
Package
Outline3
MG1005-11
8.2–12.0
50
10
200
400
M11
MG1006-11
8.2–12.0
100
10
400
700
M11
MG1007-15
8.2–12.0
250
10
700
1200
M15
MG1008-15
8.2–12.0
500
10
1000
1600
M15
Ku Band Gunn Diodes (Specifications @ 25°C)
Operating Current
Part
Number
Operating
Frequency1
(GHz)
Min.
Power2
(mW)
Typ.
Operating
Voltage (V)
Min.
(mA)
Max.
(mA)
Package
Outline3
MG1009-11
12.4–18.0
50
8
300
500
M11
MG1010-11
12.4–18.0
100
8
400
800
M11
MG1011-15
12.4–18.0
250
8
800
1200
M15
MG1012-15
12.4–18.0
500
8
1100
1700
M15
K Band Gunn Diodes (Specifications @ 25°C)
Operating Current
Part
Number
Operating
Frequency1
(GHz)
Min.
Power2
(mW)
Typ.
Operating
Voltage (V)
Min.
(mA)
Max.
(mA)
Package
Outline3
MG1013-16
18.0–26.5
50
6
400
600
M16
MG1014-16
18.0–26.5
100
6
500
1000
M16
MG1015-16
18.0–26.5
200
6
800
1400
M16
MG1016-17
18.0–23.0
400
6
900
1700
M17
1
Microsemi Gunn diodes are specified to operate within a narrow range of a customer-designated center frequency within the operating frequency range shown.
Additional frequencies are available; Please contact the factory.
2
Power is measured using a critically coupled test cavity. For pulsed diodes, pulse width = 1 S, duty factor = 1% typ.
3
Polarity: anode is the cap and cathode is the heatsink.
相關(guān)PDF資料
PDF描述
MG1018-16 26.5 GHz - 40 GHz, GALLIUM ARSENIDE, CONTINUOUS WAVE GUNN DIODE
MG1036-16 60.5 GHz - 85 GHz, GALLIUM ARSENIDE, CONTINUOUS WAVE GUNN DIODE
MG1020-16 26.5 GHz - 40 GHz, GALLIUM ARSENIDE, CONTINUOUS WAVE GUNN DIODE
MG1037-16 60.5 GHz - 85 GHz, GALLIUM ARSENIDE, CONTINUOUS WAVE GUNN DIODE
MG1009-11 12.4 GHz - 18 GHz, GALLIUM ARSENIDE, CONTINUOUS WAVE GUNN DIODE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MG1018-16 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:GUNN Diodes Cathode Heat Sink
MG1019-16 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:GUNN Diodes Cathode Heat Sink
MG1020-16 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:GUNN Diodes Cathode Heat Sink
MG1021-16 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:GUNN Diodes Cathode Heat Sink
MG1022-16 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:GUNN Diodes Cathode Heat Sink
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