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參數(shù)資料
| 型號(hào)： | MG1036-16 |
| 廠商： | MICROSEMI CORP-LOWELL |
| 元件分類： | 二極管(射頻、小信號(hào)、開關(guān)、功率) |
| 英文描述： | 60.5 GHz - 85 GHz, GALLIUM ARSENIDE, CONTINUOUS WAVE GUNN DIODE |
| 封裝： | CERAMIC, ROHS COMPLIANT, M16 |
| 文件頁(yè)數(shù)： | 4/4頁(yè) |
| 文件大?。?/td> | 204K |
| 代理商： | MG1036-16 |
MG1001 – MG1061
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page 4
TM
GUNN Diodes
Cathode Heat Sink
Copyright
2008
Rev: 2009-01-19
Gunn Diodes (Discrete Frequency: Cathode Heatsink)
Typical Characteristics
1.0
-50°C
90°C
I Bi
as
I Threshold
Ratio
Powe
r
Output
(m
W)
0.8
0.6
0.4
0.2
300
250
200
150
100
0
1
2
3
0
2
4
6
8
10
12
VBias
VThreshold
Ratio
IBias Ratio vs. VBias Ratio
Bias Voltage (V)
Power Output vs. Bias Voltage
IMPORTANT:
For the most current data, consult our website: www.MICROSEMI.com
Specifications are subject to change. Consult factory for the latest information
.
These devices are ESD sensitive and must be handled using ESD precautions.
These products are supplied with a RoHS
complaint Gold finish
.
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| MG1020-16 | 26.5 GHz - 40 GHz, GALLIUM ARSENIDE, CONTINUOUS WAVE GUNN DIODE |
| MG1037-16 | 60.5 GHz - 85 GHz, GALLIUM ARSENIDE, CONTINUOUS WAVE GUNN DIODE |
| MG1009-11 | 12.4 GHz - 18 GHz, GALLIUM ARSENIDE, CONTINUOUS WAVE GUNN DIODE |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MG1037-16 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:GUNN Diodes Cathode Heat Sink |
| MG1038-16 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:GUNN Diodes Cathode Heat Sink |
| MG1038-M16 | 制造商:Microsemi 功能描述:MG1038-M16 |
| MG1039-16 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:GUNN Diodes Cathode Heat Sink |
| MG1040-16 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:GUNN Diodes Cathode Heat Sink |
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