- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄39599 > MGUG060003L4TX (AVX CORP) BIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE PDF資料下載
參數(shù)資料
| 型號： | MGUG060003L4TX |
| 廠商： | AVX CORP |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | BIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE |
| 文件頁數(shù)： | 2/3頁 |
| 文件大小： | 390K |
| 代理商： | MGUG060003L4TX |
UltraGuard Series
ESD Protection for Low Leakage Requirements
Circuit Voltage [V]
Case Size
Capacitance
Requirement
AVX Part Number
1
Capacitance
2
[pF]
Inductance
3
[nH]
≤ 15.0 V
0402
Low
VCUG040150L1 _ _
40
<1.0
0603
Low
VCUG060150L1 _ _
160
<1.0
0805
Low
VCUG080150L1 _ _
110
<1.5
0805
Standard
VCUG080150H1 _ _
190
1.5
0405 2 -Element
Low
MGUG040150L2 _ _
40
<1.0
0508 2 -Element
Low
MGUG050150L2 _ _
75
<1.0
0612 4 -Element
Low
MGUG060150L4 _ _
75
<1.0
≤ 10.0 V
0402
Low
VCUG040100L1 _ _
90
<1.0
0603
Low
VCUG060100L1 _ _
225
<1.0
0805
Low
VCUG080100L1 _ _
275
<1.5
0805
Standard
VCUG080100H1 _ _
500
1.5
0405 2 -Element
Low
MGUG040100L2 _ _
40
<1.0
0508 2 -Element
Low
MGUG050100L2 _ _
225
<1.0
0612 4 -Element
Low
MGUG060100L4 _ _
225
<1.0
≤ 7.5 V
0402
Low
VCUG040075L1 _ _
120
<1.0
0603
Low
VCUG060075L1 _ _
425
<1.0
0805
Low
VCUG080075L1 _ _
280
<1.5
0805
Standard
VCUG080075H1 _ _
820
1.5
0405 2 -Element
Low
MGUG040075L2 _ _
40
<1.0
0508 2 -Element
Low
MGUG050075L2 _ _
425
<1.0
0612 4 -Element
Low
MGUG060075L4 _ _
425
<1.0
≤ 5.0 V
0402
Low
VCUG040005L1 _ _
230
<1.0
0603
Low
VCUG060005L1 _ _
550
<1.0
0805
Low
VCUG080005L1 _ _
585
<1.5
0405 2 -Element
Low
MGUG040005L2 _ _
40
<1.0
0508 2 -Element
Low
MGUG050005L2 _ _
425
<1.0
0612 4 -Element
Low
MGUG060005L4 _ _
425
<1.0
≤3.0 V
0402
Low
VCUG040003L1 _ _
360
<1.0
0603
Low
VCUG060003L1 _ _
825
<1.0
0805
Low
VCUG080003L1 _ _
860
<1.5
0805
Standard
VCUG080003H1 _ _
2400
1.5
0405 2 -Element
Low
MGUG040003L2 _ _
360
<1.0
0508 2 -Element
Low
MGUG050003L2 _ _
425
<1.0
0612 4 -Element
Low
MGUG060003L4 _ _
425
<1.0
1 The last two digits represent the termination finish and packaging specifications (see previous page)
2 Capacitance is measured at 0.5VRMS @ 1MHz
3 Inductance at di/dt = 100mA/Ns
Note: Typical leakage current for each part is
2llA.
相關PDF資料 |
PDF描述 |
|---|---|
| MGUG040005L2TP | BIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE |
| MGUG040075L2RX | BIDIRECTIONAL, 2 ELEMENT, SILICON, TVS DIODE |
| MGV075-16-E28 | KA BAND, 1.88 pF, 22 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE |
| MGV100-09-E28X | KA BAND, 0.53 pF, 22 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE |
| MGV100-27-E28 | KA BAND, 2.08 pF, 22 V, GALLIUM ARSENIDE, HYPERABRUPT VARIABLE CAPACITANCE DIODE |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MGUG060030H2DP | 制造商:AVX 制造商全稱:AVX Corporation 功能描述:ESD Protection for Low Leakage Requirements |
| MGUG060030H2RP | 制造商:AVX 制造商全稱:AVX Corporation 功能描述:ESD Protection for Low Leakage Requirements |
| MGUG060030H2TP | 制造商:AVX 制造商全稱:AVX Corporation 功能描述:ESD Protection for Low Leakage Requirements |
| MGUG060030H4DP | 制造商:AVX 制造商全稱:AVX Corporation 功能描述:ESD Protection for Low Leakage Requirements |
| MGUG060030H4RP | 制造商:AVX 制造商全稱:AVX Corporation 功能描述:ESD Protection for Low Leakage Requirements |
發(fā)布緊急采購，3分鐘左右您將得到回復。