參數資料
型號： MLL1.4KESD9.0CE3TR
廠商： MICROSEMI CORP-SCOTTSDALE
元件分類： TVS二極管 - 瞬態(tài)電壓抑制
英文描述： 400 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-213AA
封裝： ROHS COMPLIANT, HERMETIC SEALED, GLASS PACKAGE-2
文件頁數： 1/4頁
文件大?。?/td> 210K
代理商： MLL1.4KESD9.0CE3TR
SURFACE MOUNT TVS
WWW
.Microse
m
i
.CO
M
S C O T TS DALE DIVISION
MLL1.4KESD5.0 thru MLL1.4KESD170CA, e3
1.4KESD5.0
1.4KESD17
0A,
e3
DESCRIPTION
APPEARANCE
These small surface mount TVS devices feature the ability to clamp
dangerous high voltage short-term transients such as produced by directed
or radiated electrostatic discharge phenomena before entering sensitive
component regions of a circuit design. They are small economical transient
voltage suppressors targeted primarily for short-term transients below a few
microseconds while still achieving significant peak-pulse-power capability
as illustrated in Figure #1.
DO-213AA
IMPORTANT:
For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
Excellent protection in clamping direct ESD level
transients in excess of 15,000 V per MIL-STD-750,
Method 1020 (approx. 150 ns exponential wave)
Absorbs ESD level transients* of 1400 Watts per MIL-
STD-750, Method 1020 (approx. 150 ns exponential
wave, or one microsecond transients up to 400 watts.
See Figure #1 and #2 for overall transient Peak Pulse
Power.
Clamps Transients in less than 100 picoseconds
Working Stand-off Voltage range of 5 V to 170 V
Hermetic DO-213AA Package. Also available in axial-
leaded DO-35 package (see separate data sheet for
1.4KESD5.0 series)
RoHS Compliant devices available by adding “e3” sufffix
Protects Sensitive circuits from short duration fast
rise time transients such as Electrostatic Discharge
(ESD) or Electrical Fast Transients (EFT)
Low inherent capacitance for high-frequency
applications (See Figure #4)
Small surface mount foot print
Bidirectional features available by adding a “C” or
“CA” suffix
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
400 Watts for One Microsecond Square Wave or
1400 watts per ESD Wave form of MIL-STD-750,
method 1020
See Surge Rating curves in Figures #1, 2 and 3
Operating and storage temperature –65oC to 175oC
THERMAL RESISTANCE: 150oC/W junction to end
cap
DC power dissipation 500 mW at TEC ≤ 100oC
Derate at 2.3 W/oC above 25oC for PPP (1μs) and at
6.67 mW/
oC above 100oC for dc power
Forward Surge Current 50 amps for 1μs at TL = 25oC
(rise time > 100 ns)
CASE: Hermetically sealed glass DO-213AA surface
mount package
FINISH: Tin-lead or RoHS compliant matte-Tin
plating solderable per MIL-STD-750, method 2026
POLARITY: Banded end is cathode
WEIGHT: 0.04 grams (typical)
MARKING: Cathode band only
TAPE & REEL option: Standard per EIA-481-B (add
“TR” suffix to part number)
See package dimension on last page
Microsemi
Scottsdale Division
Page 1
Copyright
2006
3-29-2006 REV B
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
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MLL1.4KESD43CATR 400 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-213AA
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