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參數(shù)資料
| 型號(hào)： | MMDF6N02HD |
| 廠商： | Motorola, Inc. |
| 英文描述： | DUAL TMOS POWER MOSFET 6.0 AMPERES 20 VOLTS |
| 中文描述： | 偶的TMOS功率MOSFET 6.0安培20伏特 |
| 文件頁(yè)數(shù)： | 3/10頁(yè) |
| 文件大?。?/td> | 193K |
| 代理商： | MMDF6N02HD |
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
2.7 V
R
(
R
0
4
8
12
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
ID
0
0.5
1
3
0
4
8
12
ID
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
2
3
4
10
0
0.015
0.03
0.045
1
3
5
7
9
13
0.05
0.06
0.07
0.04
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 3. On–Resistance versus
Gate–To–Source Voltage
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
0.6
1
1.2
1.4
1.6
0
2.5
5
20
1
100
1000
TJ, JUNCTION TEMPERATURE (
°
C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I
VDS
≥
10 V
TJ = 100
°
C
25
°
C
–55
°
C
TJ = 25
°
C
VGS = 0 V
ID = 6 A
TJ = 25
°
C
VGS = 2.5 V
VGS = 4.5 V
ID = 3 A
1.5
2
2.5
5
6
7
8
9
11
4.5 V
–50
–25
0
25
50
75
100
125
150
TJ = 125
°
C
0.8
10
7.5
10
25
°
C
100
°
C
R
0
0.2
0.4
0.6
0.8
1.4
1
1.2
1.6
1.8
2
2
2.1 V
1.7 V
1.9 V
VGS = 10 V
4.5 V
2.3 V
2.5 V
TJ = 25
°
C
10
6
2
6
10
0.01
0.025
0.04
0.005
0.02
0.035
0.01
0.02
0.03
0
0.4
0.2
0
0.1
12.5
15
17.5
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MMDF6N02HDR2 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述: |
| MMDF6N03HD | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:DUAL TMOS POWER MOSFET 30 VOLTS |
| MMDF6N03HDR2 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 6 Amps, 30 Volts |
| MMDF7N02Z | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:DUAL TMOS POWER MOSFET 7.0 AMPERES 20 VOLTS |
| MMDF7N02ZR2 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 20V 7A 8-Pin SOIC N T/R 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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