參數(shù)資料
型號(hào)： MPTE-18CRL4
廠商： ON SEMICONDUCTOR
元件分類(lèi)： TVS二極管 - 瞬態(tài)電壓抑制
英文描述： 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE
封裝： PLASTIC, CASE 41A-04, 2 PIN
文件頁(yè)數(shù)： 2/8頁(yè)
文件大?。?/td> 58K
代理商： MPTE-18CRL4
Bi–Directional TVS
IPP
V
I
IR
IT
IR
VRWM
VC VBR
VRWM
VC
VBR
1N6382 – 1N6389 Series (ICTE–10C – ICTE–36C, MPTE–8C – MPTE–45C)
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Symbol
Parameter
IPP
Maximum Reverse Peak Pulse Current
VC
Clamping Voltage @ IPP
VRWM
Working Peak Reverse Voltage
IR
Maximum Reverse Leakage Current @ VRWM
VBR
Breakdown Voltage @ IT
IT
Test Current
QVBR
Maximum Temperature Variation of VBR
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
VRWM
IR @
Breakdown Voltage
VC @ IPP (Note 4)
VC (Volts) (Note 4)
JEDEC
Device
VRWM
(Note 2)
IR @
VRWM
VBR (Note 3) (Volts)
@ IT
VC
IPP
@IPP
QVBR
Device
(ON Device)
Device
Marking
(Volts)
(
mA)
Min
Nom
Max
(mA)
(Volts)
(A)
@ IPP
= 1 A
@ IPP
= 10 A
(mV/
°C)
1N6382
(MPTE–8C)
1N6382
MPTE–8C
8.0
25
9.4
–
1.0
15
100
11.3
11.5
8.0
1N6383
(MPTE–10C)
1N6383
MPTE–10C
10
2.0
11.7
–
1.0
16.7
90
13.7
14.1
12
1N6384
(MPTE–12C)
1N6384
MPTE–12C
12
2.0
14.1
–
1.0
21.2
70
16.1
16.5
14
1N6385
(MPTE–15C)
1N6385
MPTE–15C
15
2.0
17.6
–
1.0
25
60
20.1
20.6
18
1N6386
(MPTE–18C)
1N6386
MPTE–18C
18
2.0
21.2
–
1.0
30
50
24.2
25.2
21
1N6387
(MPTE–22C)
1N6387
MPTE–22C
22
2.0
25.9
–
1.0
37.5
40
29.8
32
26
1N6388
(MPTE–36C)
1N6388
MPTE–36C
36
2.0
42.4
–
1.0
65.2
23
50.6
54.3
50
1N6389
(MPTE–45C)
1N6389
MPTE–45C
45
2.0
52.9
–
1.0
78.9
19
63.3
70
60
ICTE–10C*
10
2.0
11.7
–
1.0
16.7
90
13.7
14.1
8.0
ICTE–12C
12
2.0
14.1
–
1.0
21.2
70
16.1
16.5
12
ICTE–15C
15
2.0
17.6
–
1.0
25
60
20.1
20.6
14
ICTE–18C
18
2.0
21.2
–
1.0
30
50
24.2
25.2
18
ICTE–22C
22
2.0
25.9
–
1.0
37.5
40
29.8
32
21
ICTE–36C
36
2.0
42.4
–
1.0
65.2
23
50.6
54.3
26
NOTES:
2. A transient suppressor is normally selected according to the maximum working peak reverse voltage (VRWM), which should be equal to
or greater than the dc or continuous peak operating voltage level.
3. VBR measured at pulse test current IT at an ambient temperature of 25°C and minimum voltage in VBR is to be controlled.
4. Surge current waveform per Figure 4 and derate per Figures 1 and 2.
*Not Available in the 500 Units/Box.
相關(guān)PDF資料
PDF描述
MPTE-15C 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE
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