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| 型號： | MUBW15-06A7 |
| 英文描述： | Industrial Control IC |
| 中文描述： | 工業(yè)控制IC |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 189K |
| 代理商： | MUBW15-06A7 |
2001 IXYS All rights reserved
2 - 8
MUBW 15-06 A7
Output Inverter T1 - T6
Symbol
Conditions
Maximum Ratings
V
CES
T
VJ
= 25
°
C to 150
°
C
600
V
V
GES
V
GEM
Continuous
±
20
±
30
V
Transient
V
I
C25
I
C80
T
C
= 25
°
C
T
C
= 80
°
C
25
18
A
A
RBSOA
V
GE
=
±
15 V; R
= 68
; T
VJ
= 125
°
C
Clamped inductive load; L = 100 μH
I
CM
= 30
V
CEK
≤
V
CES
A
t
(SCSOA)
V
= V
; V
GE
=
±
15 V; R
G
= 68
; T
VJ
= 125
°
C
non-repetitive
10
μs
P
tot
T
C
= 25
°
C
100
W
Symbol
Conditions
Characteristic Values
(T
VJ
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
CE(sat)
I
C
= 15 A; V
GE
= 15 V; T
VJ
= 25
°
C
1.9
2.2
2.3
V
V
T
VJ
= 125
°
C
V
GE(th)
I
C
= 0.4 mA; V
GE
= V
CE
4.5
6.5
V
I
CES
V
CE
= V
CES
;
V
GE
= 0 V; T
VJ
= 25
°
C
T
VJ
= 125
°
C
0.6
mA
mA
0.4
I
GES
V
CE
= 0 V; V
GE
=
±
20 V
200
nA
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
30
45
270
40
0.7
0.5
ns
ns
ns
ns
mJ
mJ
C
ies
Q
Gon
V
CE
= 25 V; V
GE
= 0 V; f = 1 MHz
V
CE
= 300V; V
GE
= 15 V; I
C
= 15 A
800
57
pF
nC
R
thJC
(per IGBT)
1.3 K/W
Inductive load, T
= 125
°
C
V
CE
= 300 V; I
C
= 15 A
V
GE
= ±15 V; R
G
= 68
Output Inverter D1 - D6
Symbol
Conditions
Maximum Ratings
I
F25
I
F80
T
C
= 25
°
C
T
C
= 80
°
C
35
24
A
A
Symbol
Conditions
Characteristic Values
min.
typ.
max.
V
F
I
F
= 15 A; V
GE
= 0 V; T
VJ
= 25
°
C
2.0
V
V
T
VJ
= 125
°
C
1.3
I
RM
t
rr
I
F
= 15 A; di
/dt = -400 A/μs; T
VJ
= 125
°
C
V
R
= 300 V; V
GE
= 0 V
13
90
A
ns
R
thJC
(per diode)
2.1 K/W
Equivalent Circuits for Simulation
Conduction
D11 - D16
Rectifier Diode (typ. at T
J
= 125
°
C)
V
0
= 1.18 V; R
0
= 15 m
T1 - T6 / D1 - D6
IGBT (typ. at V
= 15 V; T
= 125
°
C)
V
0
= 0.99 V; R
0
= 81 m
Free Wheeling Diode (typ. at T
J
= 125
°
C)
V
0
= 1.09V; R
0
= 12 m
T7 / D7
IGBT (typ. at V
= 15 V; T
= 125
°
C)
V
0
= 0.89 V; R
0
= 122 m
Free Wheeling Diode (typ. at T
J
= 125
°
C)
V
0
= 1.07 V; R
0
= 23 m
Thermal Response
D11 - D16
Rectifier Diode (typ.)
C
th1
= 0.093 J/K; R
th1
= 1.212 K/W
C
th2
= 0.778 J/K; R
th2
= 0.258 K/W
T1 - T6 / D1 - D6
IGBT (typ.)
C
th1
= 0.077 J/K; R
th1
= 1.111 K/W
C
th2
= 0.732 J/K; R
th2
= 0.279 K/W
Free Wheeling Diode (typ.)
C
th1
= 0.065 J/K; R
th1
= 1.766 K/W
C
th2
= 0.636 J/K; R
th2
= 0.344 K/W
T7 / D7
IGBT (typ.)
C
th1
= 0.071 J/K; R
th1
= 1.211 K/W
C
th2
= 0.726 J/K; R
th2
= 0.293 K/W
Free Wheeling Diode (typ.)
C
th1
= 0.043 J/K; R
th1
= 2.738 K/W
C
th2
= 0.54 J/K; R
th2
= 0.462 K/W
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
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| MUBW15-12A6 | 功能描述:MODULE IGBT CBI E1 RoHS:是 類別:半導體模塊 >> IGBT 系列:- 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應(yīng)商設(shè)備封裝:SOT-227B |
| MUBW15-12A6K | 功能描述:分立半導體模塊 15 Amps 1200V RoHS:否 制造商:Infineon Technologies 產(chǎn)品:Thyristor Power Modules 類型:Phase Controls 安裝風格:Screw 封裝 / 箱體:DT61 封裝: |
| MUBW15-12A7 | 功能描述:分立半導體模塊 15 Amps 1200V RoHS:否 制造商:Infineon Technologies 產(chǎn)品:Thyristor Power Modules 類型:Phase Controls 安裝風格:Screw 封裝 / 箱體:DT61 封裝: |
| MUBW15-12AW | 制造商:n/a 功能描述:_ |
| MUBW15-12T7 | 功能描述:分立半導體模塊 15 Amps 1200V RoHS:否 制造商:Infineon Technologies 產(chǎn)品:Thyristor Power Modules 類型:Phase Controls 安裝風格:Screw 封裝 / 箱體:DT61 封裝: |
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