參數(shù)資料
型號: NE34018-TI-63-A
元件分類: 開關(guān)
英文描述: TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED
文件頁數(shù): 1/7頁
文件大?。?/td> 525K
代理商: NE34018-TI-63-A
A-78
APEM
www.apem.com
12000X778 series
High performance toggle switches - threaded bushing 11,9 (15/32)
Distinctive features
A
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Approval and lists
CECC 96201-005
CECC 96201-008
MUAHAG and QPL listed (Europe only)
French defence approved : DAT list No A5999 X001.
This range of professional toggle switches is suitable for use in military and
other high specification environments.
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Contacts
Highly reliable contacts suitable for low level applications (10mA 50mV -
10A 5VDC min.) or power applications (2A 250VAC - 4A 125VAC -
4A 30VDC max.)
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Pinned lever
The base of the switch lever is pinned to the bushing, thus earthing the lever to
the bushing. This also provides strain relief to protect the switch if accidentally
knocked.
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Double shell case
For high mechanical strength and high electrical insulation.
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Compact size
The small rear end of the switch allows space saving behind the panel.
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Finish
Matt black finish on body, bushing, lever and hardware.
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Sealing
Panel sealed to IP 67, these switches are frontal sealed by two O-rings and
have full rear end sealing.
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Accessories
A comprehensive range of protection boots (both full and half length), locking
levers and security caps are available.
相關(guān)PDF資料
PDF描述
NE34018-TI-64-A TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED
NE350184C TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED
NE350184C-T1 TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED
NE350184C-T1A TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED
NE5511279A-T1-A TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NE34018-TI-64-A 制造商:CEL 制造商全稱:CEL 功能描述:GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER (New Plastic Package)
NE350184C 功能描述:射頻GaAs晶體管 Low Noise HJ FET RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS(最大值/最小值):4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
NE350184C(A) 制造商:Renesas Electronics Corporation 功能描述:
NE350184C-A 功能描述:射頻GaAs晶體管 Low Noise HJ FET RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS(最大值/最小值):4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
NE350184C-T1 功能描述:射頻GaAs晶體管 Low Noise HJ FET RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS(最大值/最小值):4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: