?高電流能力
?低飽和電壓:VCE(sat) =1.8V @ IC = 40A
?快速切換
?符合RoHS標準
?感應(yīng)加熱
Symbol |
Description |
Rating |
Units |
VCES |
Collector to Emitter Voltage |
600 |
V |
VGES |
Gate to Emitter Voltage |
±20 |
V |
IC |
Collector Current @ TC = 25oC |
80 |
A |
Collector Current @ TC = 100oC |
40 |
A | |
ICM (1) |
Pulsed Collector Current @ TC = 25oC |
120 |
A |
IF |
Diode Continuous Forward Current @ TC = 25oC |
40 |
A |
Diode Continuous Forward Current @ TC = 100oC |
20 |
A | |
IFM |
Diode Maximum Forward Current |
80 |
A |
PD |
Maximum Power Dissipation @ TC = 25oC |
290 |
W |
Maximum Power Dissipation @ TC = 100oC |
116 |
W | |
TJ |
Operating Junction Temperature |
-55 to +150 |
°C |
Tstg |
Storage Temperature Range |
-55 to +150 |
°C |
TL |
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds |
300 |
°C |