Features
Floatingchanneldesignedforbootstrapoperation
Fullyoperationalto+600V
Toleranttonegativetransientvoltage
dV/dtimmune
Gatedrivesupplyrangefrom10to20V
Undervoltagelockout
3.3V,5Vand15VlogICcompatible
Cross-conductionpreventionlogic
Matchedpropagationdelayforbothchannels
Internalsetdeadtime
HighsideoutputinphasewithHINinput
LowsideoutputoutofphasewithLINinput
TheIR2103(S)arehighvoltage,highspeedpowerMOSFETand
IGBTdriverswithdependenthighandlowsidereferencedoutput
channels.ProprietaryHVICandlatchimmuneCMOStechnologies
enableruggedizedmonolithicconstruction.Thelogicinputis
compatiblewithstandardCMOSorLSTTLoutput,downto3.3V
logic.Theoutputdriversfeatureahighpulsecurrentbufferstage
designedforminimumdrivercross-conduction.Thefloatingchannel
canbeusedtodriveanN-channelpowerMOSFETorIGBTinthe
highsideconfigurationwhichoperatesupto600volts.