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參數(shù)資料
| 型號： | R2A20112SP |
| 元件分類： | 穩(wěn)壓器 |
| 英文描述： | 0.2 A POWER FACTOR CONTROLLER, PDSO16 |
| 封裝： | 5.50 X 10.06 MM, 1.27 MM PITCH, LEAD FREE, PLASTIC, SOP-16 |
| 文件頁數(shù)： | 6/8頁 |
| 文件大?。?/td> | 85K |
| 代理商： | R2A20112SP |
R2A20112SP/DD
REJ03D0904-0200 Rev.2.00 Nov 13, 2007
Page 6 of 7
Electrical Characteristics (cont.)
(Ta = 25°C, Vcc = 12 V, RT = 22 k
, OCP = GND, CRAMP = 680 pF, RZCD-GND = 51 k, FB = COMP)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Master gate drive rise time
tr-gdm
—
30
100
ns
CL = 100 pF, Cramp = 3300 pF
FB = 2.0 V, COMP = 5 V
Slave gate drive rise time
tr-gds
—
30
100
ns
CL = 100 pF, Cramp = 3300 pF
FB = 2.0 V, COMP = 5 V
Master gate drive fall time
tf-gdm
—
30
100
ns
CL = 100 pF, Cramp = 3300 pF
FB = 2.0 V, COMP = 5 V
Slave gate drive fall time
tf-gds
—
30
100
ns
CL = 100 pF, Cramp = 3300 pF
FB = 2.0 V, COMP = 5 V
Vol1-gdm
—
0.05
0.2
Isink = 2 mA
Master gate drive low
voltage
Vol2-gdm
—
0.03
0.7
V
Isink = 1 mA, VCC = 5 V
Master gate drive high
voltage
Voh-gdm
11.5
11.9
—
V
Isource = –2 mA
Vol1-gds
—
0.05
0.2
Isink = 2 mA
Slave gate drive low
voltage
Vol2-gds
—
0.03
0.7
V
Isink = 1 mA, VCC = 5 V
Gate
drive
Slave gate drive high
voltage
Voh-gds
11.5
11.9
—
V
Isource = –2 mA *
1
Over
current
protection
OCP threshold voltage
Vocp
0.27
0.3
0.33
V
Dynamic OVP threshold
voltage
Vdovp
VFB
×
1.035
VFB
×
1.050
VFB
×
1.065
V
Static OVP threshold
voltage
Vsovp
VFB
×
1.075
VFB
×
1.090
VFB
×
1.105
V
COMP = Open
Static OVP hysteresis
Hys-sovp
50
100
150
mV
COMP = Open
FB open detect threshold
voltage
Vfbopen
0.45
0.50
0.55
V
COMP = Open
Over
voltage
protection
FB open detect hysteresis
Hysfbopen
0.16
0.20
0.24
V
COMP = Open
Note:
1. Design spec.
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