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2-261
2
P
Preliminary
Produc t Desc ription
Ordering Information
Typic al Applic ations
Features
Func tional Block Diagram
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching Applied
Si BJT
GaAs HBT
Si Bi-CMOS
SiGe HBT
GaAs MESFET
Si CMOS
DCS IN
V
A
GSM IN
GND
DCS OUT
GSM OUT
GND
13
11
12
9
10
1
2
4
3
5
V
8
G
7
V
6
14
G
15
B
16
GND
GND
GND
GND
RF3160
DUAL-BAND GS M/DCS
POWER AMP MODULE
3V Dual-Band GSM/DCS Handsets
Commercial and Consumer Systems
Portable Battery-Powered Equipment
GPRS Compatible
GSM, E-GSM and DCS Products
The RF3160 is a high-power, high-efficiency power ampli-
fier module. The device is self-contained with 50
input
and output terminals. The device is manufactured on an
advanced Gallium Arsenide Heterojunction Bipolar Tran-
sistor (HBT) process, and has been designed for use as
the final RF amplifier in GSM/DCS handheld digital cellu-
lar equipment and other applications in the 880MHz to
915MHz and 1710MHz to 1785MHz bands. On-board
power control provides over 70dB of control range with an
analog voltage input, and provides power down with a
logic "low" for standby operation. The device is packaged
in an ultra-small (9mmx11mm) LCC, minimizing the
required board space.
Single 2.8V to 5.0V Supply Voltage
+35.0dBm GSM Output Power at 3.2V
+32.5dBm DCS Output Power at 3.2V
55% GSM and 50% DCS Efficiency
Internal Band Select
RF3160
RF3160 PCBA
Dual-Band GSM/DCS Power Amp Module
Fully Assembled Evaluation Board
2
Rev A4 010420
Side View
Dimensions in mm.
All contact points are gold-plated,
lead-free surfaces.
9.09
±0.10
0.450
±0.075
1.40
1.25
1
0.760
TYP
4.520
0.920
TYP
1.910
TYP
FULL
RADIUS
TYP
R0.860
TYP
7.040
2. All dimensions without specific tolerances are for reference only.
NOTES:
1. Shaded area is pin 1.
Bottom View
11.61
± 0.10
Package S tyle: Module (9 mm x 11 mm)