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參數(shù)資料
| 型號： | STGP7NB60KD |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 7A - 600V - TO-220/TO-220FP/D2PAK PowerMESH⑩ IGBT |
| 中文描述： | N溝道第7A - 600V的- IGBT的TO-220/TO-220FP/D2PAK PowerMESH⑩ |
| 文件頁數(shù)： | 2/11頁 |
| 文件大小： | 505K |
| 代理商： | STGP7NB60KD |
STGP7NB60FD - STGB7NB60FD
2/11
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CES
Collector-Emitter Voltage (V
GS
= 0)
V
GE
Gate-Emitter Voltage
I
C
Collector Current (continuous) at T
C
= 25°C
I
C
Collector Current (continuous) at T
C
= 100°C
I
CM
( )
Collector Current (pulsed)
P
TOT
Total Dissipation at T
C
= 25°C
Derating Factor
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
( )
Pulse width limited by safe operating area
THERMAL DATA
Rthj-case
Rthj-amb
ELECTRICAL CHARACTERISTICS
(T
CASE
= 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
V
BR(CES)
Collector-Emitter Breakdown
Voltage
I
CES
Collector cut-off
(V
GE
= 0)
V
CE
= Max Rating, T
C
= 125 °C
I
GES
Gate-Emitter Leakage
Current (V
CE
= 0)
ON (1)
Symbol
V
GE(th)
V
CE(sat)
Parameter
Value
Unit
600
V
±20
V
14
A
7
A
56
A
80
W
0.64
W/°C
– 55 to 150
°C
150
°C
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
1.56
62.5
°C/W
°C/W
Test Conditions
I
C
= 250 μA, V
GE
= 0
Min.
600
Typ.
Max.
Unit
V
V
CE
= Max Rating, T
C
= 25 °C
50
μA
100
μA
V
GE
= ± 20V , V
CE
= 0
±100
nA
Parameter
Test Conditions
V
CE
= V
GE
, I
C
= 250 μA
V
GE
= 15V, I
C
= 7 A
V
GE
= 15V, I
C
= 7 A, Tj =125°C
Min.
Typ.
Max.
Unit
Gate Threshold Voltage
3
5
V
Collector-Emitter Saturation
Voltage
2.0
2.4
V
1.6
V
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STGP7NB60KDFP | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 7A - 600V - TO-220/TO-220FP/D2PAK SHORT CIRCUIT RATED PowerMESH TM IGBT |
| STGP7NB60KFP | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 7A - 600V - TO-220/FP/DPAK/D2PAK PowerMESH⑩ IGBT |
| STGP7NB60M | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-CHANNEL 7A - 600V TO-220/DPAK POWERMESH IGBT |
| STGP7NB60MD | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-CHANNEL 7A - 600V TO-220/D2PAK POWERMESH IGBT |
| STGP7NC60H | 功能描述:IGBT 晶體管 V-FAST POWERMESH RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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