SSF7509

E_bike應(yīng)用中MOS管重要參數(shù)對比

MOS

BVdss

Rds(on) 

Vgs(th)

Vgss

Is

Ism

Qg

SSF7509D

80.0

6.5

2.8

±30

80

320

100

SSF7510

80.0

7.0

2.7

±30

75

300

90

RJK0822

80.0

7.2

3.0

±20

80

320

63

ST75NF75

80.0

8.5

3.0

±20

75

300

160

IRFB3607PbF

75.0

7.5

3.0

±20

75

310

56

MOS

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

SSF7509D

3200.0

330.0

260.0

20.0

17.8

76.8

15.7

SSF7510

3150.0

300.0

240.0

18.2

15.2

70.5

13.8

RJK0822

3880.0

540.0

260.0

40.0

244.0

100.0

20.0

ST75NF75

3820.0

610.0

130.0

13.0

64.0

49.0

48.0

IRFB3607PbF

3070.0

280.0

130.0

16.0

110.0

43.0

96.0

Ciss:柵短路共源輸入電容

Coss:柵短路共源輸出電容

Crss:柵短路共源反向傳輸電容

to(on):開通延遲時間

td(off):關(guān)斷延遲時間

tr:上升時間

tf:下降時間

Qg :柵極總充電電量

Is :連續(xù)最大續(xù)流電流(從源極).

Ism :脈沖最大續(xù)流電流(從源極).

Vgsth) :開啟電壓(閥值電壓)

Vgss :最大柵源電壓

Rds:漏源電阻

BVdss:漏源擊穿電壓