| 品牌 | INFINEON | 型號(hào) | SI4435DY |
產(chǎn)品概述
The SI4435DY is a -30V P-channel PowerTrench? MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. Fairchild’s the latest medium voltage power MOSFET is optimized power switches combining small gate charge (QG), small reverse recovery charge (Qrr) and soft reverse recovery body diode, whICh contributes fast switching for synchronous rectification in AC/DC power supplies. It employs shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (figure of merit (QGxRDS(ON))) of these devices is 66% lower than that of previous generation. Soft body diode performance of new PowerTrench? MOSFET is able to eliminate snubber circuit or replace higher voltage rating - MOSFET need circuit because it can minimize the undesirable voltage spikes in synchronous rectification. This product is general usage and suitable for many different applications.
Low gate charge
High performance trench technology for extremely low RDS (on)
High power and current handling capability
應(yīng)用
產(chǎn)品信息
晶體管極性: P溝道 電流, Id 連續(xù): -8.8A 漏源電壓, Vds: -30V 在電阻RDS（上）: 0.015ohm 電壓 @ Rds測量: -10V 閾值電壓 Vgs: -1.7V 功耗 Pd: 2.5W 晶體管封裝類型: SOIC 針腳數(shù): 8引腳 工作溫度最高值: 175°C 產(chǎn)品范圍: - 汽車質(zhì)量標(biāo)準(zhǔn): - MSL: MSL 1 -無限制
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以上是，SI4435DY原裝正品現(xiàn)貨熱銷，品牌:INFINEON 型號(hào):SI4435DY的信息