參數(shù)資料
型號(hào): TE28F800C3TD70
廠商: INTEL CORP
元件分類: PROM
英文描述: 512K X 16 FLASH 3V PROM, 70 ns, PDSO48
封裝: 12 X 20 MM, TSOP-48
文件頁數(shù): 13/72頁
文件大小: 1083K
代理商: TE28F800C3TD70
Intel Advanced+ Boot Block Flash Memory (C3)
May 2005
Intel Advanced+ Boot Block Flash Memory (C3)
Datasheet
20
Order Number: 290645, Revision: 023
5.0
Maximum Ratings and Operating Conditions
5.1
Absolute Maximum Ratings
Warning:
Stressing the device beyond the “Absolute Maximum Ratings” may cause permanent damage.
These ratings are stress ratings only. Operation beyond the “Operating Conditions” is not
recommended, and extended exposure beyond the “Operating Conditions” may affect device
reliability.
.
5.2
Operating Conditions
NOTICE:
Specifications are subject to change without notice. Verify with your local Intel Sales office that you have the latest
datasheet before finalizing a design
.
Parameter
Maximum Rating
Notes
Extended Operating Temperature
During Read
–40 °C to +85 °C
During Block Erase and Program
–40 °C to +85 °C
Temperature under Bias
–40 °C to +85 °C
Storage Temperature
–65 °C to +125 °C
Voltage On Any Pin (except VCC and VPP) with Respect to GND
–0.5 V to +3.7 V
1
VPP Voltage (for Block Erase and Program) with Respect to GND
–0.5 V to +13.5 V
1,2,3
VCC and VCCQ Supply Voltage with Respect to GND
–0.2 V to +3.6 V
Output Short Circuit Current
100 mA
4
Notes:
1.Minimum DC voltage is –0.5 V on input/output pins. During transitions, this level may
undershoot to –2.0 V for periods <20 ns. Maximum DC voltage on input/output pins is VCC
+0.5 V which, during transitions, may overshoot to VCC +2.0 V for periods <20 ns.
2.Maximum DC voltage on VPP may overshoot to +14.0 V for periods <20 ns.
3.VPP Program voltage is normally 1.65 V–3.6 V. Connection to a 11.4 V–12.6 V supply can be
done for a maximum of 1000 cycles on the main blocks and 2500 cycles on the parameter
blocks during program/erase. VPP may be connected to 12 V for a total of 80 hours maximum.
4.Output shorted for no more than one second. No more than one output shorted at a time.
Table 5.
Temperature and Voltage Operating Conditions
Symbol
Parameter
Notes
Min
Max
Units
TA
Operating Temperature
–40
+85
°C
VCC1
VCC Supply Voltage
1, 2
2.7
3.6
Volts
VCC2
1, 2
3.0
3.6
VCCQ1
I/O Supply Voltage
12.7
3.6
Volts
VCCQ2
1.65
2.5
VCCQ3
1.8
2.5
VPP1
Supply Voltage
1
1.65
3.6
Volts
相關(guān)PDF資料
PDF描述
T101P3TAKE TOGGLE SWITCH, SPDT, LATCHED, 0.02A, 20VDC, THROUGH HOLE-RIGHT ANGLE
T103STKWBE TOGGLE SWITCH, SPDT, LATCHED, 0.02A, 20VDC, PANEL MOUNT-THREADED
T105KHWGE TOGGLE SWITCH, SPDT, MOMENTARY, 2A, 28VDC, PANEL MOUNT-THREADED
T105KTDCGE TOGGLE SWITCH, SPDT, MOMENTARY, 2A, 28VDC, THROUGH HOLE-STRAIGHT
T107MTDAGE TOGGLE SWITCH, SPDT, LATCHED AND MOMENTARY, 2A, 28VDC, THROUGH HOLE-RIGHT ANGLE
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TE28F800CEB120 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:8-MBIT (512K X 16, 1024K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
TE28F800CET120 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:8-MBIT (512K X 16, 1024K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
TE28F800CV-B60 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
TE28F800CV-B80 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:2-MBIT SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY
TE28F800CVB90 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:8-MBIT (512K X 16, 1024K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY