- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄365940 > TRANSIENT Transient Protection of MOSFETS (35k) PDF資料下載
參數(shù)資料
| 型號(hào)： | TRANSIENT |
| 英文描述： | Transient Protection of MOSFETS (35k) |
| 中文描述： | MOSFET的瞬態(tài)保護(hù)（為35K） |
| 文件頁(yè)數(shù)： | 2/3頁(yè) |
| 文件大小： | 12K |
| 代理商： | TRANSIENT |
1999 May 07
127
Philips Semiconductors
Letter Symbols - Transistors
General
Examples:
I
B2
continuous (DC) current flowing into the second
base terminal
continuous (DC) voltage between the terminals of
second base and emitter terminals.
V
B2-E
Subscripts for multiple devices
For multiple unit devices, the subscripts are modified by a
number preceding the letter subscript. In the case of
multiple subscripts, hyphens may be necessary to avoid
confusion.
Examples:
I
2C
continuous (DC) current flowing into the collector
terminal of the second unit
continuous (DC) voltage between the collector
terminals of the first and second units.
V
1C-2C
Application of the rules
Figure 1 represents a transistor collector current as a
function of time. It comprises a continuous (DC) current
and a varying component.
Letter symbols for electrical parameters
D
EFINITION
For the purpose of this publication, the term ‘electrical
parameter’ applies to four-pole matrix parameters,
elements of electrical equivalent circuits, electrical
Fig.1 Collector current as a function of time.
MBD537
current
0
(no IC
IC(RMS)
Ic(av)
ICM
ic
ic
Ic(rms)
Icm
IC(AV)
time
impedances and admittances, inductances and
capacitances.
B
ASIC LETTERS
The following list comprises the most important basic
letters used for electrical parameters of semiconductor
devices.
B, b
susceptance (imaginary part of an admittance)
C
capacitance
G, g
conductance (real part of an admittance)
H, h
hybrid parameter
L
inductance
R, r
resistance (real part of an impedance)
X, x
reactance (imaginary part of an impedance)
Y, y
admittance
Z, z
impedance.
Upper-case letters are used for the representation of:
Electrical parameters of external circuits and of circuits
in which the device forms only a part
All inductances and capacitances.
Lower-case letters are used for the representation of
electrical parameters inherent in the device, with the
exception of inductances and capacitances.
S
UBSCRIPTS
General subscripts
The following list comprises the most important general
subscripts used for electrical parameters of semiconductor
devices.
F, f
forward (forward transfer)
I, i (or 1)
input
L, l
load
O, o (or 2)
output
R, r
reverse (reverse transfer)
S, s
source.
Examples: Z
s
, h
f
, h
F
.
The upper-case variant of a subscript is used for the
designation of static (DC) values.
Examples:
h
FE
static value of forward current transfer ratio in
common-emitter configuration (DC current gain)
DC value of the external emitter resistance.
R
E
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TRAY0010 | CONDUCTIVE TRAY |
| TWEE0002 | PNP Medium power transistor |
| TRCV0110G | ATM/SONET DEMULTIPLEXER|BIPOLAR|BGA|177PIN|PLASTIC |
| TRF-70 | Fuse |
| TRF-80 | Fuse |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TRANSISTOR KIT | 制造商:JAMECO VALUEPRO 功能描述:560 PIECE TRANSISTOR COMPONENT KIT |
| TRANSISTORS | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Letter Symbols - Transistors(12.15 k) |
| TRANSLATOR | 制造商:MICREL 制造商全稱:Micrel Semiconductor 功能描述:LOW-POWER HEX ECL-to-TTL TRANSLATOR |
| TRANSPORTATION | 制造商:TYAN 功能描述:TRANSPORTATION COST - Bulk |
| TRANS-STK084 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:IMST, 1 Channel by 2 Power Supply |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。