參數(shù)資料
型號： μPA801T
廠商： NEC Corp.
英文描述： High-Frequency Low Noise Amplifier NPN Transistor(高頻低噪聲放大器NPN晶體管)
中文描述： 高頻低噪聲放大器NPN晶體管（高頻低噪聲放大器npn型晶體管）
文件頁數(shù)： 1/6頁
文件大?。?/td> 45K
代理商： ΜPA801T
SILICON TRANSISTOR
μ
PA801T
The
μ
PA801T has built-in 2 low-voltage transistors which are designed
to amplify low noise in the VHF band to the UHF band.
FEATURES
Low Noise
NF = 1.2 dB TYP. @ f = 1 GHz, V
CE
= 3 V, I
C
= 7 mA
High Gain
|S
21e
|
2
= 9.0 dB TYP. @ f = 1 GHz, V
CE
= 3 V, I
C
= 7 mA
A Mini Mold Package Adopted
Built-in 2 Transistors (2
×
2SC4226)
ORDERING INFORMATION
PART NUMBER
QUANTITY
PACKING STYLE
μ
PA801T
Loose products
(50 PCS)
Embossed tape 8 mm wide. Pin 6 (Q1
Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter)
face to perforation side of the tape.
μ
PA801T-T1
Taping products
(3 KPCS/Reel)
Remark
If you require an evaluation sample, please contact an NEC
Sales Representative. (Unit sample quantity is 50 pcs.)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
PARAMETER
SYMBOL
RATING
UNIT
Collector to Base Voltage
V
CBO
20
V
Collector to Emitter Voltage
V
CEO
12
V
Emitter to Base Voltage
V
EBO
3
V
Collector Current
I
C
100
mA
Total Power Dissipation
P
T
150 in 1 element
200 in 2 elements
Note
mW
J unction Temperature
T
j
150
C
Storage Temperature
T
stg
–65 to +150
C
Note
110 mW must not be exceeded in 1 element.
HIGH-FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
(WITH BUILT-IN 6-PIN 2 ELEMENTS) MINI MOLD
PIN CONFIGURATION (Top View)
Printed in J apan
Document No. ID-3635
(O.D. No. ID-9142)
Date Published April 1995 P
2.1±0.1
1.25±0.1
1
2
3
6
5
4
0
–
+
0
0
1
2
0
0
0
0
–
+
6
Q
1
5
4
Q
2
1
2
3
PIN CONNECTIONS
1. Collector (Q1)
2. Emitter (Q1)
3. Collector (Q2)
4. Emitter (Q2)
5. Base (Q2)
6. Base (Q1)
X
PACKAGE DRAWINGS
(Unit: mm)
The information in this document is subject to change without notice.
1995
PRELIMINARY DATA SHEET
相關(guān)PDF資料
PDF描述
μPA802T High-Frequency Low Noise Amplifier NPN Transistor(高頻低噪聲放大器NPN晶體管)
μPA804TC NPN Epitaxial Transisitor(NPN外延晶體管)
μPA804T NPN Silicon Epitaxial Transistor(NPN 外延硅晶體管)
μPA806T Microwave Low Noise Amplifier NPN Silicon Transistor(微波低噪聲放大器NPN晶體管)
μPA808T Low Noise Microwave Amlification NPN Epitaxial Silicon Transistor(應用于微波低噪聲放大器的NPN硅外延晶體管)
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