參數(shù)資料
型號： μPA802T
廠商： NEC Corp.
英文描述： High-Frequency Low Noise Amplifier NPN Transistor(高頻低噪聲放大器NPN晶體管)
中文描述： 高頻低噪聲放大器NPN晶體管（高頻低噪聲放大器npn型晶體管）
文件頁數(shù)： 2/6頁
文件大?。?/td> 45K
代理商： ΜPA802T
μ
PA802T
2
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
PARAMETER
SYMBOL
CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cutoff Current
I
CBO
V
CB
= 10 V, I
E
= 0
0.8
μ
A
Emitter Cutoff Current
I
EBO
V
EB
= 1 V, I
C
= 0
0.8
μ
A
DC Current Gain
h
FE
V
CE
= 3 V, I
C
= 7 mA
Note 1
70
240
Gain Bandwidth Product
f
T
V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
4.5
7.0
GHz
Feed-back Capacitance
C
re
V
CB
= 3 V, I
E
= 0, f = 1 MHz
Note 2
0.9
pF
Insertion Power Gain
|S
21
|
2
V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
10
12
dB
Noise Figure
NF
V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
1.4
1.7
dB
h
FE
Ratio
h
FE1
/h
FE2
V
CE
= 3 V, I
C
= 7 mA
A smaller value among
h
FE
of h
FE
1 = Q1, Q2
A larger value among
h
FE
of h
FE
2 = Q1, Q2
0.85
Notes 1.
Pulse Measurement: Pw
≤
350
μ
s, Duty cycle
≤
2 %
2.
Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.
h
FE
CLASSIFICATION
Rank
FB
GB
Marking
R34
R35
h
FE
Value
70 to 150
110 to 240
TYPICAL CHARACTERISTICS (T
A
= 25
°
C)
5
0
10
0.5
0.5
1.0
10
15
20
0
0.5
1.0
10
20
1
5
10
50
20
50
100
200
V
CE
= 3 V
V
CE
= 3 V
25
P
T
- T
A
Characteristics
100
0
50
100
150
200
T
T
(
Ambient Temperature T
A
(°C)
Free Air
2EemensinToa
PerElemen
C
C
Base to Emitter Voltage V
BE
(V)
I
C
- V
BE
Characteristics
Collector to Emitter Voltage V
CE
(V)
C
C
(
Collector Current I
C
(mA)
D
F
h
FE
- I
C
Characteristics
I
C
- V
CE
Characteristics
160 A
140 A
120 A
100 A
80 A
60 A
40 A
I
B
= 20 A
μ
μ
μ
μ
μ
相關PDF資料
PDF描述
μPA804TC NPN Epitaxial Transisitor(NPN外延晶體管)
μPA804T NPN Silicon Epitaxial Transistor(NPN 外延硅晶體管)
μPA806T Microwave Low Noise Amplifier NPN Silicon Transistor(微波低噪聲放大器NPN晶體管)
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