參數(shù)資料
型號(hào): μPA804T
廠商: NEC Corp.
英文描述: NPN Silicon Epitaxial Transistor(NPN 外延硅晶體管)
中文描述: NPN硅外延晶體管(npn型外延硅晶體管)
文件頁(yè)數(shù): 2/8頁(yè)
文件大?。?/td> 50K
代理商: ΜPA804T
μ
PA804T
2
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
PARAMETER
SYMBOL
CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cutoff Current
I
CBO
V
CB
= 15 V, I
E
= 0
0.1
μ
A
Emitter Cutoff Current
I
EBO
V
EB
= 1 V, I
C
= 0
0.1
μ
A
Collector to Emitter
Saturation Voltage
V
CE (sat)
h
FE
= 10, I
C
= 5 mA
0.5
V
DC Current Gain
h
FE
V
CE
= 5 V, I
C
= 5 mA
Note 1
60
200
Gain Bandwidth Product (1)
f
T
V
CE
= 5 V, I
C
= 5 mA, f = 1 GHz
3
5
GHz
Feed-back Capacitance
C
re
V
CB
= 5 V, I
E
= 0, f = 1 MHz
Note 2
0.9
1.2
pF
Insertion Power Gain (1)
|S
21
|
2
V
CE
= 5 V, I
C
= 5 mA, f = 1 GHz
5
dB
h
FE
Ratio
h
FE1
/h
FE2
V
CE
= 5 V, I
C
= 5 mA
A smaller value among
h
FE
of h
FE
1 = Q1, Q2
A larger value among
h
FE
of h
FE
2 = Q1, Q2
0.85
Notes 1.
Pulse Measurement: Pw
350
μ
s, Duty cycle
2 %
2.
Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.
h
FE
CLASSIFICATION
Rank
FB
GB
Marking
T76
T77
h
FE
Value
60 to 120
100 to 200
TYPICAL CHARACTERISTICS (T
A
= 25
°
C)
50
100
150
50
0
T
T
Ambient Temperature T
A
(°C)
120 mW
160 mW
100
150
Free Air
P
T
–T
A
Characteristics
0
V
CE
= 5 V
8
16
24
0.2
0.4
0.6
0.8
1.0
C
C
I
C
–V
BE
Characteristics
Base to Emitter Voltage V
BE
(V)
Pe Eemen
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