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參數(shù)資料
| 型號： | μPC8112T |
| 廠商： | NEC Corp. |
| 英文描述： | Silicon MMIC 1st Frequency Down-Converter(下變頻轉(zhuǎn)換器單片微波集成電路) |
| 中文描述： | 硅單片第一頻率下轉(zhuǎn)換器（下變頻轉(zhuǎn)換器單片微波集成電路） |
| 文件頁數(shù)： | 5/20頁 |
| 文件大?。?/td> | 129K |
| 代理商： | ΜPC8112T |
Data Sheet P10764EJ3V0DS00
5
μ
PC8112T
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Conditions
Ratings
Unit
Supply Voltage
V
CC
T
A
= +25
°
C, 5 pin and 6 pin
3.6
V
Total Circuit Current
I
CC
T
A
= +25
°
C
77.7
mA
Total Power Dissipation
P
D
Mounted on 50
×
50
×
1.6 mm epoxy glass
PWB
(T
A
=
+
85
°
C)
280
mW
Operating Ambient Temperature
T
A
40 to
+
85
°
C
Storage Temperature
T
stg
55 to
+
150
°
C
RECOMMENDED OPERATING CONDITIONS
Parameter
Symbol
MIN.
TYP.
MAX.
Unit
Remark
Supply Voltage
V
CC
2.7
3.0
3.3
V
5 pin and 6 pin should be applied
to same voltage.
Operating Ambient Temperature
T
A
40
+
25
+
85
°
C
LO Input Level
P
LOin
15
10
0
dBm
Z
s
= 50
RF Input Frequency
f
RFin
0.8
1.9
2.0
GHz
IF Output Frequency
f
IFout
100
250
300
MHz
With external matching
ELECTRICAL CHARACTERISTICS (Unless otherwise specified, T
A
=
+
25
°
C, V
CC
= V
PS
= V
IFout
= 3.0 V,
P
LOin
=
10 dBm, Z
S
= Z
L
= 50
)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
Circuit Current
I
CC
No signals
4.9
8.5
11.7
mA
Circuit Current at Power Save
Mode
I
CC(PS)
V
CC
= 3.0 V, V
PS
= 0.5 V
0.1
μ
A
Conversion Gain
CG
f
RFin
= 900 MHz, f
LOin
= 1 000 MHz
f
RFin
= 1.9 GHz, f
LOin
= 1.66 GHz
11.5
9.5
15
13
17.5
15.5
dB
Single Side Band Noise Figure
SSB NF
f
RFin
= 900 MHz, f
LOin
= 1 000 MHz
f
RFin
= 1.9 GHz, f
LOin
= 1.66 GHz
9.0
11.2
11
13.2
dB
Saturated Output Power
Po
(sat)
f
RFin
= 900 MHz, f
LOin
= 1 000 MHz
f
RFin
= 1.9 GHz, f
LOin
= 1.66 GHz
(P
RFin
=
10 dBm each)
6.5
7
2.5
3
dBm
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