參數(shù)資料
型號(hào): μPD45256441
廠商: NEC Corp.
英文描述: 256M-Bit Synchronous DRAM(256M 同步 動(dòng)態(tài)RAM)
中文描述: 256M位同步DRAM(256M同步動(dòng)態(tài)RAM)的
文件頁數(shù): 20/84頁
文件大小: 1052K
代理商: ΜPD45256441
20
μ
PD45256441,45256841,45256163
Preliminary Data Sheet
5. Initialization
The synchronous DRAM is initialized in the power-on sequence according to the following.
(1) To stabilize internal circuits, when power is applied, a 100
μ
s or longer pause must precede any signal toggling.
(2) After the pause, both banks must be precharged using the Precharge command (The Precharge all banks
command is convenient).
(3) Once the precharge is completed and the minimum t
RP
is satisfied, the mode register can be programmed.
After the mode register set cycle, t
RSC
(2 CLK minimum) pause must be satisfied as well.
(4) Two or more CBR (Auto) refresh must be performed.
Remarks 1.
The sequence of Mode register programming and Refresh above may be transposed.
2.
CKE and DQM must be held high until the Precharge command is issued to ensure data-bus Hi-Z.
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