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參數(shù)資料
| 型號： | μPD78016F |
| 廠商： | NEC Corp. |
| 英文描述： | 8 Bit Single Chip Microcontrollers(8位單片微控制器) |
| 中文描述： | 8位單片機微控制器（8位單片微控制器） |
| 文件頁數(shù)： | 36/74頁 |
| 文件大?。?/td> | 567K |
| 代理商： | ΜPD78016F |
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36
μ
PD78011F, 78012F, 78013F, 78014F, 78015F, 78016F, 78018F
Subsystem Clock Oscillation Circuit Characteristics
(T
A
= –40 to +85
°
C, V
DD
= 1.8 to 5.5 V)
Notes 1.
Indicates only oscillation circuit characteristics. Refer to
AC Characteristics
for instruction execution time.
2.
Time required to stabilize oscillation after V
DD
reaches oscillator voltage MIN.
MIN.
32
32
5
TYP.
32.768
1.2
MAX.
35
2
10
100
15
Unit
kHz
s
kHz
μ
s
Resonator
Crystal
resonator
External
clock
Test Conditions
V
DD
= 4.5 to 5.5 V
Parameter
Oscillator
frequency (f
XT
)
Note 1
Oscillation
stabilization time
Note 2
XT1 input
frequency (f
XT
)
Note 1
XT1 input
high/low level width
(t
XTH
, t
XTL
)
Cautions 1. When using the subsystem clock oscillator, wiring in the area enclosed with the dotted line should
be carried out as follows to avoid an adverse effect from wiring capacitance.
G
Wiring should be as short as possible.
G
Wiring should not cross other signal lines.
G
Wiring should not be placed close to a varying high current.
G
The potential of the oscillator capacitor ground should be the same as V
SS
.
G
Do not ground wiring to a ground pattern in which a high current flows.
G
Do not fetch a signal from the oscillator.
2. The subsystem clock oscillation circuit is a circuit with a low amplification level,more prone to
misoperation due to noise than the main system clock.
Particular care is therefore required with the wiring method when the subsystem clock is used.
Recommended
Circuit
XT1
XT2
C4
C3
R2
V
SS
XT1
XT2
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