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參數(shù)資料
| 型號(hào)： | 03904GPF |
| 廠商： | MICROSEMI CORP-LAWRENCE |
| 元件分類： | 晶閘管 |
| 英文描述： | Silicon Controlled Rectifier; Package: TO-65; IT (Av) (A): 40; VTM (V): 1.8; IH (mA): 500; VGT (V): 3; IGT (µA): 150000; tq (nsec): 15000; Vrrm (V): 400; |
| 中文描述： | 62.8 A, SCR, TO-65 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 79K |
| 代理商： | 03904GPF |
TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
Gort Road Business Park, Ennis, Co. Clare, Ireland
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
Website: http://www.microsemi.com
T4-LDS-0166 Rev. 1 (100696)
Page 2 of 4
TRIGGERING CHARACTERISTICS (TJ = +25°C, tp = 10us unless otherwise noted)
Parameters / Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Gate voltage to Trigger
VGT
3.0
V
Typical gate voltage to Trigger
VGT
1.0
V
Nontriggering gate voltage
Tj = +125°C
VGD
0.15
V
Gate current to Trigger
IGT
150
mA
Typical gate current to Trigger
IGT
48
mA
Peak gate power
PGM
10
W
Average gate power
PG(AV)
2.0
W
Peak gate current
IGM
3.0
A
Peak gate voltage (forward)
VGM
20
V
Peak gate voltage (reverse)
VGM
10
V
BLOCKING
Parameters / Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Leakage Current
Tj = +125°C @ VDRM
IDRM
12
mA
Reverse Leakage
Tj = +125°C @ VRRM
IRRM
12
mA
Critical rate of rise of off-state voltage
Tj = +125°C
dv/dt
200
V/
μs
SWITCHING CHARACTERISTICS
Parameters / Test Conditions
Symbol
Min.
Typ.
Max.
Unit
Critical rate of rinse of on-state current
(note 1)
Tj = +125°C
di/dt
400
A/s
Typical delay time (note 1)
td
2.0
s
Maximum circuit commuted turn-off time (note 2)
tq(P)
tq(U)
15
20
s
NOTE:
1.
ITM = 50A, VD = VDR. VGT = 12V open circuit, 20 ohm-0.1 usec. rise time.
2.
ITM = 50A, di/dt = -5A/μsec., VR during turn-off interval = 50V min., reapplied dv/dt = 20V/μsec., linear to rated VDRM,
VGT = 0V.
3.
To specify tq other than P = 15 μsec., enter appropriate letter in place of ”P”, U = 20 μsec.
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