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參數(shù)資料
| 型號： | 0405SC-1000M |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | 功率晶體管 |
| 英文描述： | SiC UHF: 400-450MHz, Class AB, Common Gate-Pulsed; P(out) (W): 1000; P(in) (W): 180; Gain (dB): 8; Vcc (V): 125; Pulse Width (µsec): 300; Duty Cycle (%): 10; Case Style: 55KT FET-1 |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, JFET |
| 封裝： | CASE 55KT, 2 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 288K |
| 代理商： | 0405SC-1000M |
0405SC-1000M Rev C
Microsemi PPG Inc. reserves the right to change, without notice, the specifications and information contained herein.
Visit our web site at www.microsemi..com or contact our factory direct.
PRELIMINARY SPECIFICATION
GENERAL DESCRIPTION
The 0405SC-1000M is a Common Gate N-Channel Class AB SILICON
CARBIDE
STATIC
INDUCTION
TRANSISTOR
(SIT)
capable of
providing 1000 Watts of RF power from 406 to 450 MHz. The transistor is
designed for use in High Power Amplifiers supporting applications such as UHF
Weather Radar and Long Range Tracking Radar. The device is an addition to
a series of High Power Silicon Carbide Transistors from Microsemi PPG.
CASE OUTLINE
55KT FET
(Common Gate)
1 = Drain
2 = Gate
3 = Source
ABSOLUTE MAXIMUM RATINGS
Voltage and Current
Drain-Source (VDSS)
250V
Gate-Source (VGS)
-1V
Temperatures
Storage Temperature
-65 to +150
°C
Operating Junction Temperature
+250
°C
ELECTRICAL CHARACTERISTICS @ 25
°C
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Idss
Drain-Source Leakage Current
VGS = -20V, VDG= 125V
750
A
Igss
Gate-Source Leakage Current
VGS = -20V, VDS = 0V
50
A
θJC
1
Thermal Resistance
0.15
C/W
FUNCTIONAL CHARACTERISTICS @ 25
°C, Vdd = 125V, I
dq(ave) = 250 mA, Freq = 406, 425, 450 MHz,
GPG
Common Gate Power Gain
Pout = 1000 W, Pulsed
8
8.5
dB
Pin
Input Power
Pulse Width = 300us, DF = 10%
140
155
W
ηd
Drain Efficiency
F = 450 MHz, Pout =1000W
50
%
ψ
Load Mismatch
F = 406 MHz, Pout = 1000W
10:1
Po +1dB
Power Output – Higher Drive
F = 450 MHz, Pin = 180 W
1100
W
Vgs
Gate source Voltage
Set for Idq(ave) = 250mA
3.0
10.0
Volts
Feb 2009
0405SC-1000M
1000Watts, 125 Volts, Class AB
406 to 450 MHz
Silicon Carbide SIT
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 0405SC-1000M_10 | 制造商:MICROSEMI 制造商全稱:Microsemi Corporation 功能描述:1000Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT |
| 0405SC-100M | 制造商:Microsemi Corporation 功能描述:0405SC-100M - Bulk |
| 0405SC-1500M | 制造商:Microsemi Corporation 功能描述:0405SC-1500M - Bulk 制造商:Microsemi Corporation 功能描述:RF POWER TRANSISTOR SILICON CARBIDE |
| 0405SC-2200M | 制造商:Microsemi Corporation 功能描述:0405SC-2200M - Bulk |
| 0405SC-500M | 制造商:Microsemi Corporation 功能描述:0405SC-500M - Bulk |
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