參數(shù)資料
型號(hào): 0708-500
元件分類: 功率晶體管
英文描述: UHF BAND, Si, NPN, RF POWER TRANSISTOR
封裝: 55AX, 2 PIN
文件頁數(shù): 1/1頁
文件大小: 12K
代理商: 0708-500
R.1.A.990601-HERIC
GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE
WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS, THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
0708-500
500 Watts, 50 Volts, Pulsed
Radar 600 - 750 MHz
ADVANCED ISSUE
GENERAL DESCRIPTION
The 0708-500 is a high power COMMON BASE bipolar transistor.
It is
designed for pulsed systems in the frequency band 600 - 750 MHz.
The
transistor includes input and output prematch for broadband performance. The
device has gold thin-film metallization for highest MTTF.
Low thermal
resistance Solder Sealed Package reduces junction temperature, extends life.
CASE OUTLINE
55AX
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @25
°C
1700 W
Maximum Voltage and Current
Collector to Base Voltage (BVces)65 V
Emitter to Base Voltage (BVebo)3.5 V
Collector Current (Ic)40 A
Maximum Temperatures
Storage Temperature
-65 to +200
°C
Operating Junction Temperature
+200
°C
ELECTRICAL CHARACTERISTICS @ 25
°°°°C
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Pout
Power Out
F
= 700 MHz
500
W
Pin
Power Input
Vcc = 36 Volts
90
W
Pg
Power Gain
PW = Note 1
7.4
dB
η
c
Collector Efficiency
DF =
Note 1
40
%
VSWR
Load Mismatch Tolerance
F = 700 MHz
5:1
FUNCTIONAL CHARACTERISTICS @ 25
°°°°C
BVebo
Emitter to Base Breakdown
Ie = 20 mA
3.0
V
BVces
Collector to Emitter Breakdown
Ic = 50 mA
65
V
hFE
DC – Current Gain
Vce = 5V, Ic = 500mA
20
θjc2
Thermal Resistance
0.1
°C/W
NOTE 1: 10
s at 1% Duty
2. At rated pulse conditions
.
Initial Issue May 1999
相關(guān)PDF資料
PDF描述
0708250 32 A, MODULAR TERMINAL BLOCK, 1 ROW, 1 DECK
0708360 32 A, MODULAR TERMINAL BLOCK, 1 ROW, 1 DECK
0302CS-4N0XJLU RF inductor, ceramic core, 5/10% tol, SMT, RoHS
0302CS-10NXJLU RF inductor, ceramic core, 5/10% tol, SMT, RoHS
0302CS-10NXJLW RF inductor, ceramic core, 5/10% tol, SMT, RoHS
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