參數(shù)資料
型號: 0770_XP152A01D8MR
廠商: TOREX SEMICONDUCTOR LTD.
英文描述: Power MOS FET
中文描述: 功率MOS場效應管
文件頁數(shù): 1/4頁
文件大?。?/td> 156K
代理商: 0770_XP152A01D8MR
834
11
The XP152A01D8MR is a P-Channel Power MOS FET with low on-
state resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set
thereby saving energy.
The small SOT-23 package makes high density mounting possible.
Low on-state resistance : Rds(on)=0.48
(Vgs=-4.5V)
: Rds(on)=0.80
(Vgs=-2.5V)
Ultra high-speed switching
Operational Voltage
: -2.5V
High density mounting : SOT-23
GNotebook PCs
GCellular and portable phones
GOn-board power supplies
GLi-ion battery systems
NP-Channel Power MOS FET
NDMOS Structure
NLow On-State Resistance: 0.48 (max)
NUltra High-Speed Switching
NSOT-23 Package
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Reverse Drain Current
Continuous Channel
Power Dissipation (note)
Channel Temperature
Storage Temperature
Vdss
Vgss
Id
Idp
Idr
Pd
Tch
Tstg
-20
±12
-0.5
-1.5
-0.5
0.5
150
-55~150
V
A
W
:
SYMBOL
RATINGS
UNITS
Ta=25
:
When implemented on a ceramic PCB
Note:
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