參數(shù)資料
型號: 0785_XP161A1355PR
廠商: TOREX SEMICONDUCTOR LTD.
英文描述: POWER MOSFET
中文描述: 功率MOSFET
文件頁數(shù): 1/4頁
文件大?。?/td> 165K
代理商: 0785_XP161A1355PR
846
11
The XP161A1355PR is an N-Channel Power MOS FET with low on-state
resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set
thereby saving energy.
A gate protect diode is built-in to prevent static damage.
The small SOT-89 package makes high density mounting possible.
Low on-state resistance : Rds (on) = 0.05
( Vgs = 4.5V )
: Rds (on) = 0.07
( Vgs = 2.5V )
: Rds (on) = 0.15
( Vgs = 1.5V )
Ultra high-speed switching
Gate protect diode built-in
Operational Voltage
: 1.5V
High density mounting : SOT-89
GNotebook PCs
GCellular and portable phones
GOn-board power supplies
GLi-ion battery systems
NN-Channel Power MOS FET
NDMOS Structure
NLow On-State Resistance : 0.05 (max)
NUltra High-Speed Switching
NSOT-89 Package
NGate Protect Diode Built-in
PIN
NUMBER
PIN
NAME
FUNCTION
1
3
2
G
S
D
Gate
Source
Drain
Ta=25OC
SYMBOL
RATINGS
UNITS
Vdss
20
V
Vgss
8
V
Id
4
A
Idp
16
A
Idr
4
A
Pd
2
W
Tch
150
O
C
Tstg
- 55 ~ 150
O
C
( note ) : When implemented on a ceramic PCB
Storage Temperature
Reverse Drain Current
Continuous Channel
Power Dissipation (note)
Channel Temperature
Drain - Source Voltage
Gate - Source Voltage
Drain Current (DC)
Drain Current (Pulse)
PARAMETER
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