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| 型號： | 08F1774 |
| 英文描述： | TRANSISTOR MOSFET TO-220 |
| 中文描述： | 晶體管場效應(yīng)管- 220 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 159K |
| 代理商： | 08F1774 |
MTP1N50E
3
Motorola TMOS Power MOSFET Transistor Device Data
TYPICAL ELECTRICAL CHARACTERISTICS
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(NORMALIZED)
R
DS(on)
,DRAIN–T
O–SOURCE
RESIST
ANCE
(OHMS)
0
4
8
12
16
0
0.50
1.0
1.50
2.0
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 1. On–Region Characteristics
I D
,DRAIN
CURRENT
(AMPS)
2.0
3.0
4.0
5.0
6.5
0
0.75
1.25
1.75
2.0
I D
,DRAIN
CURRENT
(AMPS)
VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0
0.4
0.8
1.2
1.6
2.0
0
2
8
10
0
0.50
1.0
1.50
2.0
3.0
4.0
5.5
6.0
ID, DRAIN CURRENT (AMPS)
Figure 3. On–Resistance versus Drain Current
and Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. On–Resistance versus Drain Current
and Gate Voltage
–50
0
0.5
1.0
2.0
2.5
0
100
200
300
400
500
1
10
100
1000
10000
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On–Resistance Variation with
Temperature
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Drain–To–Source Leakage
Current versus Voltage
I DSS
,LEAKAGE
(nA)
–25
0
25
50
75
100
125
150
TJ = 25°C
VDS ≥ 10 V
TJ = 100°C
25
°C
– 55
°C
25
°C
TJ = 25°C
VGS = 0 V
VGS = 10 V
ID = 0.5 A
7 V
8 V
6 V
5 V
15 V
TJ = 125°C
100
°C
25
°C
1.50
0.50
1.0
0.25
0.75
1.25
1.75
6
1.5
3.5
4.5
5.0
6.0
3.5
4.5
5.5
6
10
14
0.25
0.75
1.25
1.75
2
0.25
2.5
4
TJ = 100°C
– 55
°C
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