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| 型號(hào)： | 08F1985 |
| 英文描述： | DIODE ULTRA FAST 3A |
| 中文描述： | 超快速二極管3A條 |
| 文件頁(yè)數(shù)： | 6/8頁(yè) |
| 文件大小： | 188K |
| 代理商： | 08F1985 |
MTW16N40E
6
Motorola TMOS Power MOSFET Transistor Device Data
SAFE OPERATING AREA
TJ, STARTING JUNCTION TEMPERATURE (°C)
E AS
,SINGLE
PULSE
DRAIN–T
O–SOURCE
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
A
V
ALANCHE
ENERGY
(mJ)
t, TIME (ms)
Figure 13. Thermal Response
r(t)
,NORMALIZED
EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE
R
θJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) R
θJC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
Figure 14. Diode Reverse Recovery Waveform
di/dt
trr
ta
tp
IS
0.25 IS
TIME
IS
tb
25
150
0
0.00001
0.0001
0.01
0.1
1.0
0.01
0.001
0.1
1.0
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
D = 0.5
10
900
50
100
125
75
800
700
600
500
400
300
100
200
ID = 16 A
10
100
1000
VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)
0.1
1
10
100
I D
,DRAIN
CURRENT
(AMPS)
1
VGS = 20 V
SINGLE PULSE
TC = 25°C
THERMAL LIMIT
PACKAGE LIMIT
RDS(on) LIMIT
20
2
0.2
2
20
200
10
s
100
s
1ms
10 ms
dc
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