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參數(shù)資料
| 型號： | 0912LD20 |
| 廠商： | MICROSEMI POWER PRODUCTS GROUP |
| 元件分類： | 功率晶體管 |
| 英文描述： | LDMOS: Transponder/Interrogator, 1030/1090 MHz, class AB Common Source; P(out) (W): 20; P(in) (W): 1; Gain (dB): 15; Vcc (V): 28; Pulse Width (µsec): 32; Duty Cycle (%): 2; Case Style: 55QT |
| 中文描述： | L BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CASE 55QT, 2 PIN |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 266K |
| 代理商： | 0912LD20 |
Microsemi reserves the right to change, without notice, the specifications and information contained herein. Visit
our web site at www.microsemi.com or contact our factory direct.
0912LD20
20 Watts, 28 Volts
Pulsed Avionics 960 to 1215 MHz
LDMOS FET
GENERAL DESCRIPTION
The 0912LD20 is a COMMON SOURCE N-Channel enhancement mode lateral
MOSFET capable of providing 20Wpk of RF power from 960 to 1215 MHz.
The device is nitride passivated and utilizes gold metallization to ensure highest
MTTF.
The transistor includes input and output prematch for broadband
capability.
Low thermal resistance package reduces junction temperature,
extends life.
CASE OUTLINE
55QT
(Common Source)
ABSOLUTE MAXIMUM RATINGS
Power Dissipation
Device Dissipation @25
°C (Pd)
60 W
Voltage and Current
Drain-Source (VDSS)
35V
Gate-Source (VGS, VDS=0)
20V
Temperatures
Storage Temperature
-40 to +150
°C
Operating Case Temperature
+100
°C
ELECTRICAL CHARACTERISTICS @ 25
°C
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
BVdss
Drain-Source Breakdown
Vgs = 0V, Id = 1mA
65
V
Idss
Drain-Source Leakage Current
Vds = 28V, Vgs= 0V
50
A
Igss
Gate-Source Leakage Current
Vgs = 10V, Vds = 0V
1
A
Vgs(th)
Gate Threshold Voltage
Vds = 10V, Id = 3mA
3
5
V
Vds(on)
Drain-Source On Voltage
Vgs = 10V, Id = 250mA
0.23
V
gFS
Forward Transconductance
Vds = 10V, Id = 125mA
590
mA/V
θJC1
Thermal Resistance
0.3
C/W
FUNCTIONAL CHARACTERISTICS @ 25
°C, Vds = 28V, I
dq = 80mA
GPS
Common Source Power Gain
Pulse width = 32s, LTDC=2%
14
15
dB
Pd
Pulse Droop
F=960/1215 MHz, Pout = 20W
0.5
dB
ηd
Drain Efficiency
F = 960 MHz, Pout = 20W
40
42
%
ψ
Load Mismatch
F = 1090 MHz, Pout = 20W
5:1
NOTES: 1. At rated output power and pulse conditions
2. Pulse Format 1: 32s, 2% Long Term Duty Factor
Rev. A - May 2008
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