參數(shù)資料
型號(hào): 1.5SMC6.8AT3
廠商: ON SEMICONDUCTOR
元件分類(lèi): 參考電壓二極管
英文描述: 1500 Watt Peak Power Zener Transient Voltage Suppressors(1500W 峰值功率齊納抗雷管(TVS))
中文描述: 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
封裝: PLASTIC, CASE 403-03, SMC, 2 PIN
文件頁(yè)數(shù): 2/7頁(yè)
文件大?。?/td> 73K
代理商: 1.5SMC6.8AT3
1.5SMC6.8AT3 Series
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Power Dissipation (Note 1) @ T
L
= 25
°
C, Pulse Width = 1 ms
P
PK
1500
W
DC Power Dissipation @ T
= 75
°
C
Measured Zero Lead Length (Note 2)
Derate Above 75
°
C
Thermal Resistance, JunctiontoLead
P
D
R
JL
4.0
54.6
18.3
W
mW/
°
C
°
C/W
DC Power Dissipation (Note 3) @ T
A
= 25
°
C
Derate Above 25
°
C
Thermal Resistance from JunctiontoAmbient
P
D
R
JA
0.75
6.1
165
W
mW/
°
C
°
C/W
Forward Surge Current (Note 4) @ T
A
= 25
°
C
I
FSM
200
A
Operating and Storage Temperature Range
T
J
, T
stg
65 to +150
°
C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. 10 X 1000 s, nonrepetitive
2. 1 in. square copper pad, FR4 board
3. FR4 board, using ON Semiconductor minimum recommended footprint, as shown in 403 case outline dimensions spec.
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless
otherwise noted, V
F
= 3.5 V Max. @ I
F
(Note 5) = 100 A)
Symbol
Parameter
I
PP
Maximum Reverse Peak Pulse Current
V
C
Clamping Voltage @ I
PP
V
RWM
Working Peak Reverse Voltage
I
R
Maximum Reverse Leakage Current @ V
RWM
V
BR
Breakdown Voltage @ I
T
I
T
Test Current
V
BR
Maximum Temperature Coefficient of V
BR
I
F
Forward Current
V
F
Forward Voltage @ I
F
5. 1/2 sine wave or equivalent, PW = 8.3 ms nonrepetitive duty
cycle
UniDirectional TVS
I
PP
I
F
V
I
I
R
I
T
V
RWM
V
C
V
BR
V
F
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