參數(shù)資料
型號: 100304D
廠商: National Semiconductor Corporation
英文描述: Low Power Quint AND/NAND Gate
中文描述: 低功耗昆特和/與非門
文件頁數(shù): 4/8頁
文件大?。?/td> 109K
代理商: 100304D
AC Electrical Characteristics
V
EE
= 4.2V to 5.7V, V
CC
= V
CCA
= GND
Symbol
Parameter
T
C
= 55C
Min
0.30
T
C
= +25C
Min
0.40
T
C
= +125C
Min
0.30
Units
Conditions
Notes
Max
1.90
Max
1.80
Max
2.30
t
PLH
t
PHL
t
PLH
t
PHL
t
TLH
t
THL
Propagation Delay
D
na
–D
ne
to O, O
Propagation Delay
Data to F
Transition Time
20% to 80%, 80% to 20%
ns
(Notes 7, 8, 9)
0.80
2.90
0.90
2.80
0.90
3.40
ns
Figures 1, 2
0.20
1.80
0.30
1.60
0.20
2.00
ns
(Note 10)
Note 7:
F100K 300 Series cold temperature testing is performed by temperature soaking (to guarantee junction temperature equals 55C), then testing immediately
after power-up. This provides “cold start” specs which can be considered a worst case condition at cold temperatures.
Note 8:
Screen tested 100% on each device at +25C temperature only, Subgroup A9.
Note 9:
Sample tested (Method 5005, Table I) on each mfg. lot at +25C, Subgroup A9, and at +125C and 55C temperatures, Subgroups A10 and A11.
Note 10:
Not tested at +25C, +125C, and 55C temperature (design characterization data).
Test Circuitry
DS100304-5
Notes:
V
, V
= +2V, V
= 2.5V
L1 and L2 = equal length 50
impedance lines
R
T
= 50
terminator internal to scope
Decoupling 0.1 μF from GND to V
CC
and V
EE
All unused outputs are loaded with 50
to GND
C
L
= Fixture and stray capacitance
3 pF
FIGURE 1. AC Test Circuit
www.national.com
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