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參數(shù)資料
| 型號(hào)： | 100324 |
| 廠(chǎng)商： | National Semiconductor Corporation |
| 英文描述： | Low Power Hex TTL-to-ECL Translator |
| 中文描述： | 低功耗六角的TTL到ECL翻譯 |
| 文件頁(yè)數(shù)： | 3/6頁(yè) |
| 文件大?。?/td> | 117K |
| 代理商： | 100324 |
Absolute Maximum Ratings
(Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Above which the useful life may be impaired.
Storage Temperature (T
STG
)
Maximum Junction Temperature (T
J
)
Ceramic
V
EE
Pin Potential to Ground Pin
V
TTL
Pin Potential to Ground Pin
Input Voltage (DC)
Output Current (DC Output HIGH)
65C to +150C
+175C
7.0V to +0.5V
0.5V to +6.0V
0.5V to +6.0V
50 mA
ESD (Note 2)
≥
2000V
Recommended Operating
Conditions
Case Temperature (T
C
)
Military
Supply Voltage (V
EE
)
Note 1:
Absolute maximum ratings are those values beyond which the de-
vice may be damaged or have its useful life impaired. Functional operation
under these conditions is not implied.
Note 2:
ESD testing conforms to MIL-STD-883, Method 3015.
55C to +125C
5.7V to 4.2V
Military Version
DC Electrical Characteristics
V
EE
= 4.2V to 5.7V, V
CC
= V
CCA
= GND, T
C
= 55C to +125C, V
TTL
= +4.5V to +5.5V
Symbol
Parameter
Min
Max
Units
T
C
Conditions
Notes
V
OH
Output HIGH Voltage
1025
870
mV
0C to +125C
V
IN
= V
IH
or V
IL
((Max)
Loa to 2.0V
50
(Notes 3, 4, 5)
1085
870
mV
55C
V
OL
Output LOW Voltage
1830
1620
mV
0C to +125C
1830
1555
mV
55C
V
OHC
Output HIGH Voltage
1035
mV
0C to +125C
V
IN
= V
IH
or V
IL
((Max)
Loa to 2.0V
50
(Notes 3, 4, 5)
1085
mV
55C
V
OLC
Output LOW Voltage
1610
mV
0C to +125C
1555
mV
55C
V
IH
Input HIGH Voltage
2.0
5.0
V
55C to +125C
Over V
TTL
, V
EE
, T
C
Range
(Notes 3, 4, 5, 6)
V
IL
Input LOW Voltage
0.0
0.8
V
55C to +125C
Over V
TTL
, V
EE
, T
C
Range
V
IN
= +2.7V
V
IN
= +7.0V
(Notes 3, 4, 5, 6)
I
IH
Input HIGH Current
20
μA
55C to +125C
(Notes 3, 4, 5)
Breakdown Test
100
μA
55C to +125C
I
IL
Input LOW Current
Data
0.9
mA
55C to +125C
V
IN
= +0.4V
(Notes 3, 4, 5)
Enable
5.4
V
FCD
Input Clamp Diode Voltage
1.2
V
55C to +125C
I
IN
= 18 mA
All Inputs V
IN
= +4.0V
All Inputs V
IN
= GND
(Notes 3, 4, 5)
I
EE
V
EE
Power Supply Current
70
22
mA
55C to +125C
(Notes 3, 4, 5)
I
TTL
V
TTL
Power Supply Current
38
mA
55C to +125C
(Notes 3, 4, 5)
Note 3:
F100K 300 Series cold temperature testing is performed by temperature soaking (to guarantee junction temperature equals 55C), then testing immediately
without allowing for the junction temperature to stabilize due to heat dissipation after power-up. This provides “cold start” specs which can be considered a worst case
condition at cold temperatures.
Note 4:
Screen tested 100% on each device at 55C, +25C, and +125C, Subgroups 1, 2, 3, 7, and 8.
Note 5:
Sample tested (Method 5005, Table I) on each manufactured lot at 55C, +25C, and +125C, Subgroups A1, 2, 3, 7, and 8.
Note 6:
Guaranteed by applying specified input condition and testing V
OH
/V
OL
.
AC Electrical Characteristics
V
EE
= 4.2V to 5.7V, V
CC
= V
CCA
= GND, V
TTL
= +4.5V to +5.5V
Symbol
Parameter
T
C
= 55C
T
C
= +25C
T
C
= +125C
Units
Conditions
Notes
Min
Max
Min
Max
Min
Max
t
PLH
Propagation Delay
0.50
3.00
0.50
2.90
0.30
3.30
ns
(Notes 7, 8, 9)
t
PHL
Data and Enable to Output
Figures 1, 2
t
TLH
Transition Time
0.35
1.80
0.45
1.80
0.45
1.80
ns
(Note 10)
t
THL
20% to 80%, 80% to 20%
Note 7:
F100K 300 Series cold temperature testing is performed by temperature soaking (to guarantee junction temperature equals 55C), then testing immediately
after power-up. This provides “cold start” specs which can be considered a worst case condition at cold temperatures.
Note 8:
Screen tested 100% on each device at +25C temperature only, Subgroup A9.
Note 9:
Sample tested (Method 5005, Table I) on each manufactured lot at +25C, Subgroup A9, and at +125C and 55C temperatures, Subgroups A10 and A11.
Note 10:
Not tested at +25C, +125C, and 55C temperature (design characterization data).
www.national.com
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