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參數(shù)資料
| 型號(hào)： | 100325 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | Low Power Hex ECL-to-TTL Translator |
| 中文描述： | 低功耗六角ECL至的TTL翻譯 |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 125K |
| 代理商： | 100325 |
Absolute Maximum Ratings
(Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Above which the useful life may be impaired.
Storage Temperature (T
STG
)
Maximum Junction Temperature (T
J
)
Ceramic
V
EE
Pin Potential to Ground Pin
V
TTL
Pin Potential to Ground Pin
Input Voltage (DC)
65C to +150C
+175C
7.0V to +0.5V
0.5V to +6.0V
V
EE
to +0.5V
Voltage Applied to Output
in HIGH State (with V
CC
= 0V)
Current Applied to Output
in LOW State (Max)
ESD (Note 2)
0.5V to V
CC
twice the rated I
OL
(mA)
≥
2000V
Recommended Operating
Conditions
Case Temperature (T
C
)
Military
Supply Voltage (V
EE
)
Note 1:
Absolute maximum ratings are those values beyond which the de-
vice may be damaged or have its useful life impaired. Functional operation
under these conditions is not implied.
Note 2:
ESD testing conforms to MIL-STD-883, Method 3015.
55C to +125C
5.7V to 4.2V
Military Version
DC Electrical Characteristics
V
EE
= 4.2V to 5.7V, V
CC
= V
CCA
= GND, T
C
= 55C to +125C, C
L
= 50 pF, V
TTL
= +4.5V to +5.5V
Symbol
Parameter
Min
Max
V
BB
Output Reference Voltage
1380
1260
Units
T
C
Conditions
Notes
0C to +125C
I
VBB
= 3 μA, V
EE
= 4.2V
I
VBB
= 2.1 mA
I
VBB
= 3 mA
Guaranteed HIGH Signal for All Inputs
(with One Input Tied to V
BB
)
Guaranteed LOW Signal for All Inputs
(with One Input Tied to V
BB
)
I
OH
= 2.0 mA
(Notes 3,
4, 5)
mV
V
EE
= 5.7V
1396
1165
1260
870
55C
V
IH
Input HIGH Voltage
mV
55C to +125C
(Notes 3,
4, 5, 6)
V
IL
Input LOW Voltage
1830
1475
mV
55C to +125C
(Notes 3,
4, 5, 6)
V
OH
Output HIGH Voltage
2.5
2.4
mV
0C to +125C
55C
55C to +125C
55C to +125C
V
IN
= V
IH (Max)
or V
IL (Min)
(N4, 5)
V
OL
V
DIFF
Output LOW Voltage
Input Voltage Differential
0.5
mV
mV
I
OL
= 20 mA
Required for Full Output Swing
150
(Notes 3,
4, 5)
V
CM
Common Mode Voltage
2000
500
mV
55C to +125C
(Notes 3,
4, 5, 6)
I
IH
Input HIGH Current
350
500
μA
0C to +125C
55C
55C to +125C
V
IN
= V
IH (Max)
, D
0
–D
5
= V
BB
,
D
0
–D
5
= V
IL (Min)
V
IN
= V
IL (Min),
D
0
–D
5
= V
BB
(Notes 3,
4, 5)
I
IL
Input LOW Current
0.50
μA
(Notes 3,
4, 5)
I
OS
Output Short Circuit
Current
Output HIGH
Leakage Current
V
EE
Power Supply Current
150
60
mA
55C to +125C
V
OUT
= GND
Test One Output at a Time
V
OUT
= 5.5V
(Notes 3,
4, 5)
I
CEX
250
μA
55C to +125C
(Notes 3,
4, 5)
I
EE
35
12
mA
55C to +125C
D
0
–D
5
= V
BB
(Notes 3,
4, 5)
(Notes 3,
4, 5)
I
TTL
V
TTL
Power Supply Current
65
mA
55C to +125C
D
0
–D
5
= V
BB
Note 3:
F100K 300 Series cold temperature testing is performed by temperature soaking (to guarantee junction temperature equals 55C), then testing immediately
without allowing for the junction temperature to stabilize due to heat dissipation after power-up. This provides “cold start” specs which can be considered a worst case
condition at cold temperatures.
Note 4:
Screen tested 100% on each device at 55C, +25C, and +125C, Subgroups 1, 2, 3, 7, and 8.
Note 5:
Sample tested (Method 5005, Table I) on each manufactured lot at 55C, + 25C, and +125C, Subgroups A1, 2, 3, 7, and 8.
Note 6:
Guaranteed by applying specified input condition and testing V
OH
/V
OL
.
3
www.national.com
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