參數(shù)資料
型號: 100BGQ100J
英文描述: 100V 100A Schottky Discrete Diode in a PowIRtab (Short) package
中文描述: 100V的分立二極管肖特基100號A在PowIRtab(短)封裝
文件頁數(shù): 3/7頁
文件大?。?/td> 125K
代理商: 100BGQ100J
100BGQ045, 100BGQ045J
3
Bulletin PD-20709 rev. D 12/02
www.irf.com
Fig. 2 - Typical Values of Reverse Current
Vs. Reverse Voltage
Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Fig.1-Maximum Forward Voltage Drop Characteristics
1
10
100
1000
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
F
FM
T = 150°C
T = 125°C
T = 25°C
J
Forward Voltage Drop - V
(V)
In
st
a
n
ta
n
e
ou
sF
o
rw
a
rd
Cu
rre
n
t-
I
(
A
)
0.01
0.1
1
10
100
1000
0
5
10 15 20 25 30 35 40 45
R
125°C
100°C
75°C
50°C
25°C
Re
ve
rs
e
C
ur
re
nt
-I
(
m
A
)
T = 150°C
J
Reverse Voltage - V (V)
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
th
JC
t , Rectangular Pulse Duration (Seconds)
Single Pulse
(Thermal Resistance)
1
Th
e
rm
a
lI
m
p
e
d
a
n
c
eZ
(
°C/
W
)
Notes:
1. Duty factor D = t / t
2. Peak T = P
x Z
+ T
1
2
J
thJC
C
DM
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
2
t
1
t
PDM
100
1000
10000
0
10
20
304050
R
T
Ju
n
ct
io
nCa
p
a
ci
ta
nc
e-
C
(
p
F)
T = 25°C
J
Reverse Voltage - V (V)
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