
111RKI Series
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12
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage
Code
V
DRM
/V
RRM
, max. repetitive
peak and off-state voltage
V
400
V
RSM
, maximum non-
repetitive peak voltage
V
500
I
DRM
/I
RRM
max.
@ T
J
= T
J
max.
mA
Type number
40
111RKI
80
800
900
20
120
1200
1300
I
T(AV)
Max. average on-state current
110
A
180° conduction, half sine wave
@ Case temperature
90
°C
I
T(RMS)
I
TSM
Max. RMS on-state current
172
DC @ 83°C case temperature
Max. peak, one-cycle
2080
t = 10ms
No voltage
non-repetitive surge current
2180
A
t = 8.3ms
reapplied
1750
t = 10ms
100% V
RRM
reapplied
1830
t = 8.3ms
Sinusoidal half wave,
I
2
t
Maximum I
2
t for fusing
21.7
t = 10ms
No voltage
Initial T
J
= T
J
max.
19.8
t = 8.3ms
reapplied
15.3
t = 10ms
100% V
RRM
14.0
t = 8.3ms
reapplied
I
2
√
t
Maximum I
2
√
t for fusing
217
KA
2
√
s
t = 0.1 to 10ms, no voltage reapplied
V
T(TO)1
Low level value of threshold
voltage
V
T(TO)
2
High level value of threshold
voltage
r
t1
Low level value of on-state
slope resistance
r
t2
High level value of on-state
slope resistance
V
TM
Max. on-state voltage
1.57
V
I
pk
= 350A, T
J
= T
J
max., t
p
= 10ms sine pulse
I
H
Maximum holding current
150
I
L
Typical latching current
400
0.82
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
2.16
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), T
J
= T
J
max.
1.70
(I >
π
x I
T(AV)
),T
J
= T
J
max.
Parameter
111RKI
Units Conditions
1.02
(I >
π
x I
T(AV)
),T
J
= T
J
max.
On-state Conduction
KA
2
s
V
m
mA
T
J
= 25°C, anode supply 6V resistive load
di/dt
Max. non-repetitive rate of rise
of turned-on current
Gate drive 20V, 20
, t
r
≤
1μs
T
J
= T
J
max, anode voltage
≤
80% V
DRM
Gate current 1A, di
g
/dt = 1A/μs
V
d
= 0.67% V
DRM
,
T
J
= 25°C
I
TM
= 50A, T
J
= T
J
max., di/dt
= -5A/μs, V
R
= 50V
dv/dt
= 20V/μs, Gate 0V 25
Parameter
111RKI
Units Conditions
t
d
Typical delay time
1
Switching
t
q
Typical turn-off time
110
μs
300
A/μs