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參數(shù)資料
| 型號(hào)： | 112MT80KB |
| 廠商： | International Rectifier |
| 英文描述： | THREE PHASE CONTROLLED BRIDGE |
| 中文描述： | 三相控橋 |
| 文件頁(yè)數(shù)： | 9/9頁(yè) |
| 文件大?。?/td> | 121K |
| 代理商： | 112MT80KB |
53-93-113MT..KB Series
Bulletin I27503 08/97
9
www.irf.com
Fig. 16 - Thermal Impedance Z
thJC
Characteristics
Fig. 17 - Gate Characteristics
0.1
0.001
1
10
100
0.01
0.1
1
10
100
1000
(b)
(a)
Rectangular gate pulse
a) Recommended load line for
(4) (3)
(2) (1)
(1) PGM = 100 W, tp = 500
μs
(2) PGM = 50 W, tp = 1 ms
(3) PGM = 20 W, tp = 25 ms
(4) PGM = 10 W, tp = 5 ms
Instantaneous Gate Current (A)
I
T
°
T
T
VGD
IGD
Frequency Limited by PG(AV)
rated di/dt: 20 V, 30 ohms
tr = 0.5
μs, tp >= 6 μs
b) Recommended load line for
<= 30% rated di/dt: 20 V, 65 ohms
tr = 1 μs, tp >= 6 μs
53/ 93/ 113MT..KB Series
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
Square Wave Pulse Duration (s)
t
T
Per Junction
53MT..KB Series
113MT..KB Series
93MT..KB Series
Steady State Value
R = 1.07 K/W
R = 0.86 K/W
R = 0.70 K/W
(DC Operation)
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