參數(shù)資料
型號(hào)： 113MT160KB
廠商： International Rectifier
英文描述： THREE PHASE CONTROLLED BRIDGE
中文描述： 三相控橋
文件頁(yè)數(shù)： 2/9頁(yè)
文件大小： 121K
代理商： 113MT160KB
www.irf.com
53-93-113MT..KB Series
2
Bulletin I27503 08/97
53MT.KB
52MT.KB
51MT.KB
55
85
390
410
330
93MT.KB 113MT.KB
92MT.KB 112MT.KB Units Conditions
91MT.KB 111MT.KB
90
110
85
85
950
1130
1000
1180
800
950
Parameter
I
O
Maximum DC output current
@ Case temperature
Maximum peak, one-cycle
forward, non-repetitive
on state surge current
A
°C
A
120° Rect conduction angle
I
TSM
t = 10ms
t = 8.3ms
t = 10ms
No voltage
reapplied
100% V
RRM
reapplied
No voltage
reapplied
100% V
RRM
reapplied
345
770
700
540
500
840
4525
4130
3200
2920
1000
6380
5830
4510
4120
t = 8.3ms
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
Initial
I
2
t
Maximum I
2
t for fusing
A
2
s
T
J
= T
J
max.
I
2
√
t
Maximum I
2
√
t for fusing
7700
45250
63800
A
2
√
s
t = 0.1 to 10ms, no voltage reapplied
V
T(TO)1
Low level value of threshold
voltage
1.17
1.09
1.04
V
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), @ T
J
max.
V
T(TO)2
High level value of threshold
voltage
1.45
1.27
1.27
(I >
π
x I
T(AV)
), @ T
J
max.
r
t1
Low level value on-state
slope resistance
12.40
4.10
3.93
m
(16.7% x
π
x I
T(AV)
< I <
π
x I
T(AV)
), @ T
J
max.
r
t2
High level value on-state
slope resistance
Maximum on-state voltage drop
11.04
3.59
3.37
(I >
π
x I
T(AV)
), @ T
J
max.
V
TM
2.68
1.65
1.57
V
I
pk
= 150A, T
J
= 25°C
t
p
= 400μs single junction
T
J
= 25
o
C, from 0.67 V
DRM
, I
TM
=
π
x I
T(AV)
,
I
g
= 500mA, t
r
< 0.5 μs, t
p
> 6 μs
T
J
= 25
o
C, anode supply = 6V,
resistive load, gate open circuit
T
J
= 25
o
C, anode supply = 6V, resistive load
di/dt
Max. non-repetitive rate
of rise of turned on current
Max. holding current
150
A/μs
I
H
200
mA
I
L
Max. latching current
400
Forward Conduction
Voltage
Code
V
RRM
, maximum
repetitive peak
reverse voltage
V
800
1000
1200
1400
1600
800
1000
1200
1400
1600
V
RSM
, maximum
non-repetitive peak
reverse voltage
V
900
1100
1300
1500
1700
900
1100
1300
1500
1700
V
DRM
, max. repetitive
peak off-state voltage
gate open circuit
V
800
1000
1200
1400
1600
800
1000
1200
1400
1600
I
RRM
/I
DRM
max.
@ T
J
= 125°C
Type number
mA
80
100
120
140
160
80
100
120
140
160
53/52/51MT..KB
10
93/92/91MT..KB
113/112/111MT..KB
20
ELECTRICAL SPECIFICATIONS
Voltage Ratings
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