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參數(shù)資料
| 型號： | 11E1 |
| 廠商： | NIHON INTER ELECTRONICS CORP |
| 元件分類： | 二極管(射頻、小信號、開關、功率) |
| 英文描述： | 1 A, 100 V, SILICON, SIGNAL DIODE |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 21K |
| 代理商： | 11E1 |
OUTLINE DRAWING
Maximum Ratings
Approx Net Weight:0.21g
Rating
Symbol
11E1
Unit
Repetitive Peak Reverse Voltage
VRRM
100
V
Non-repetitive Peak Reverse Voltage
VRSM
250
V
Average Rectified Output Current
IO
1.0
Ta=40
°C
50Hz Half Sine
Wave Resistive Load
A
RMS Forward Current
IF(RMS)
1.57
A
Surge Forward Current
IFSM
45
50Hz Half Sine Wave,1cycle,
Non-repetitive
A
Operating JunctionTemperature Range
Tjw
- 40 to + 150
°C
Storage Temperature Range
Tstg
- 40 to + 150
°C
Electrical
Thermal Characteristics
Characteristics
Symbol
Conditions
Min. Typ. Max.
Unit
Peak Reverse Current
IRM
Tj= 25
°C, VRM= VRRM
-
50
A
Peak Forward Voltage
VFM
Tj= 25
°C, IFM= 1.0A
-
1.0
V
Thermal Resistance
Rth(j-a) Junction to Ambient
-
120
°C/W
DIODE
Type ::::
11E1
FEATURES
* Miniature Size
* Low Forward Voltage drop
* Low Reverse Leakage Current
* High Surge Capability
* 26mm and 52mm Inside Tape Spacing Package
Available
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