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參數(shù)資料
| 型號(hào)： | 11H22 |
| 英文描述： | Phototransistors |
| 中文描述： | 光電晶體管 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 30K |
| 代理商： | 11H22 |
SIDE LOOK PACKAGE
NPN PHOTODETECTOR
MID-11H22
Description
Package Dimensions
The MID-11H22 is a NPN silicon phototransistor mounted
in a lensed , special dark plastic and side looking package.
Features
l
Wide range of collector current
l
Lensed for high sensitivity
l
Low cost plastic package
l
Good spectral matching to IRED (
λp >800 nm) type.
Absolute Maximum Ratings
@ TA=25
oC
Parameter
Maximum Rating
Unit
Power Dissipation
100
mW
Collector-Emitter Voltage
30
V
Emitter-Collector Voltage
5
V
Operating Temperature Range
-55
oC to +100oC
Storage Temperature Range
-55
oC to +100oC
Lead Soldering Temperature
260
oC for 5 seconds
04/04/2002
Unity Opto Technology Co., Ltd.
Unit: mm ( inches )
Notes :
1. Tolerance for excess molding compound is ± 0.005".
2. Lead spacing is measured where the leads emerge from the package.
1.00 MIN.
(.040)
2.54
(.100)
0.50 TYP.
(.020)
1.55±0.12
(.061±.005)
1.22±0.07
(.048±.003)
2.22
(.087)
0.76
(.030)
C
E
5.72±0.12
(.225±.005)
12.70 MIN.
(.500)
4.45±0.12
(.175±.005)
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